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Matsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori (1985) Photo-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 841-844 doi:10.1016/0022-3093(85)90791-4

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Reference TypeJournal (article/letter/editorial)
TitlePhoto-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2
JournalJournal of Non-Crystalline Solids
AuthorsMatsumura, HidekiAuthor
Uesugi, TakashiAuthor
Ihara, HisanoriAuthor
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90791-4Search in ResearchGate
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Mindat Ref. ID626209Long-form Identifiermindat:1:5:626209:3
GUID0
Full ReferenceMatsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori (1985) Photo-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 841-844 doi:10.1016/0022-3093(85)90791-4
Plain TextMatsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori (1985) Photo-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 841-844 doi:10.1016/0022-3093(85)90791-4
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

See Also

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Matsumura, Hideki, Ihara, Hisanori, Tachibana, Hiroyuki, Tanaka, Hirofumi (1985) Highly photo-conductive amorphous silicon produced by thermal CVD method using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 793-796 doi:10.1016/0022-3093(85)90779-3
Uesugi, Takashi, Ihara, Hisanori, Matsumura, Hideki (1985) Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF2. Japanese Journal of Applied Physics, 24. 1263-1266 doi:10.1143/jjap.24.1263
Matsumura, Hideki, Furukawa, Seijiro (1983) A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2. Journal of Non-Crystalline Solids, 59. 739-742 doi:10.1016/0022-3093(83)90277-6
Uesugi, Takashi, Ihara, Hisanori, Matsumura, Hideki (1985) The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF2. Japanese Journal of Applied Physics, 24. 909-911 doi:10.1143/jjap.24.909
Matsumura, Hideki, Ihara, Hisanori, Uesugi, Takashi (1985) Impurity doping properties of hydrofluorinated amorphous silicon produced by intermediate species SiF2. Journal of Applied Physics, 57 (12). 5483-5485 doi:10.1063/1.334825
Matsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori (1985) Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF2and CF4Mixture. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l24
Ihara, Hisanori, Uesugi, Takashi, Matsumura, Hideki (1986) Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon. Japanese Journal of Applied Physics, 25. 1280-1283 doi:10.1143/jjap.25.1280
Matsumura, Hideki, Tachibana, Hiroyuki (1985) Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2. Applied Physics Letters, 47 (8). 833-835 doi:10.1063/1.96000
Matsumura, Hideki, Ihara, Hisanori (1988) Catalytic chemical vapor deposition method to prepare high quality hydro‐fluorinated amorphous silicon. Journal of Applied Physics, 64 (11). 6505-6509 doi:10.1063/1.342069
Jones, B.L. (1985) The effect of mechanical stress on amorphous silicon transistors. Journal of Non-Crystalline Solids, 77. 1405-1408 doi:10.1016/0022-3093(85)90918-4
Street, R.A. (1985) Localized states in doped amorphous silicon. Journal of Non-Crystalline Solids, 77. 1-16 doi:10.1016/0022-3093(85)90599-x
 
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