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Onuki, Masami, Matsunaga, Hiroshi, Kubota, Hiroshi (1985) Amplitude and phase of transient AC photocurrent of a-Si:H pin+ diode under infrared illumination. Journal of Non-Crystalline Solids, 77. 315-318 doi:10.1016/0022-3093(85)90664-7

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Reference TypeJournal (article/letter/editorial)
TitleAmplitude and phase of transient AC photocurrent of a-Si:H pin+ diode under infrared illumination
JournalJournal of Non-Crystalline Solids
AuthorsOnuki, MasamiAuthor
Matsunaga, HiroshiAuthor
Kubota, HiroshiAuthor
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90664-7Search in ResearchGate
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Mindat Ref. ID625783Long-form Identifiermindat:1:5:625783:9
GUID0
Full ReferenceOnuki, Masami, Matsunaga, Hiroshi, Kubota, Hiroshi (1985) Amplitude and phase of transient AC photocurrent of a-Si:H pin+ diode under infrared illumination. Journal of Non-Crystalline Solids, 77. 315-318 doi:10.1016/0022-3093(85)90664-7
Plain TextOnuki, Masami, Matsunaga, Hiroshi, Kubota, Hiroshi (1985) Amplitude and phase of transient AC photocurrent of a-Si:H pin+ diode under infrared illumination. Journal of Non-Crystalline Solids, 77. 315-318 doi:10.1016/0022-3093(85)90664-7
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

See Also

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Onuki, Masami, Tsubuski, Koji, Kubota, Hiroshi (1987) AC photoconductivity of amorphous GaP diodes made by reactive evaporation under implantation of hydrogen ions. Journal of Non-Crystalline Solids, 97. 1347-1350 doi:10.1016/0022-3093(87)90323-1
Kubota, Hiroshi, Onuki, Masami (1989) Photoconductivity of hydrogenated amorphous GaP / chrystalline GaP junction. Journal of Non-Crystalline Solids, 115 (1) 39-41 doi:10.1016/0022-3093(89)90353-0
Onuki, Masami, Fujii, Takanori, Kubota, Hiroshi (1989) Time-of-flight measurement of hydrogenated amorphous GaP. Journal of Non-Crystalline Solids, 114. 792-794 doi:10.1016/0022-3093(89)90722-9
Street, R.A. (1985) Transient photoconductivity in a-Si:H. Journal of Non-Crystalline Solids, 77. 635-638 doi:10.1016/0022-3093(85)90738-0
Snow, Eric, Silver, M. (1985) Transient single-carrier injection currents in a-Si:H. Journal of Non-Crystalline Solids, 77. 451-454 doi:10.1016/0022-3093(85)90695-7
Kubota, Hiroshi, Tashiro, Tomohiro, Fujiyoshi, Takanori, Hirayu, Tsuyoshi, Onuki, Masami (1996) Localized states of a-GaP:N by nitrogen ion beam assisted deposition. Journal of Non-Crystalline Solids, 198. 383-386 doi:10.1016/0022-3093(96)00159-7
Könenkamp, Rolf (1985) Transient photocurrents at the a-Si:H/SiOx interface. Journal of Non-Crystalline Solids, 77. 1011-1014 doi:10.1016/0022-3093(85)90832-4
Mishima, Y., Soeda, S., Yanagisawa, S., Asama, K. (1985) Photocurrent spectroscopy in a-Si:H diodes. Journal of Non-Crystalline Solids, 77. 1425-1428 doi:10.1016/0022-3093(85)90923-8
Orlowski, T.E, Abkowitz, M (1985) Subnanosecond transient photocurrents in a-Se and a-Si:H. Journal of Non-Crystalline Solids, 77. 439-442 doi:10.1016/0022-3093(85)90692-1
Johnson, N.M, Jackson, W.B (1985) Energy placement of the D− dangling-bond transition in a-Si:H from photocapacitance and photocurrent spectroscopies. Journal of Non-Crystalline Solids, 77. 335-338 doi:10.1016/0022-3093(85)90669-6
Kunst, Marinus, Werner, André (1985) Charge carrier decay processes in a-Si:H studied with transient photoconductivity techniques. Journal of Non-Crystalline Solids, 77. 631-634 doi:10.1016/0022-3093(85)90737-9
 
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