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Antoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2

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Reference TypeJournal (article/letter/editorial)
TitleGrowth processes of RF glow discharge deposited a-Si:H and a-Ge:H films
JournalJournal of Non-Crystalline Solids
AuthorsAntoine, A.MAuthor
Drevillon, BAuthor
Roca, PAuthor
Cabarrocas, IAuthor
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90773-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID626154Long-form Identifiermindat:1:5:626154:6
GUID0
Full ReferenceAntoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2
Plain TextAntoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

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Antoine, A. M., Drevillon, B., Roca i Cabarrocas, P. (1987) Insituinvestigation of the growth of rf glow‐discharge deposited amorphous germanium and silicon films. Journal of Applied Physics, 61 (7). 2501-2508 doi:10.1063/1.337924
i Cabarrocas, P.Roca, Liu, J.Z., Park, H.R., Maruyama, A., Wagner, S. (1989) Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge. Journal of Non-Crystalline Solids, 114. 190-192 doi:10.1016/0022-3093(89)90109-9
Zentai, Gy., Füstöss-Wégner, M. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids, 77. 225-228 doi:10.1016/0022-3093(85)90644-1
Roca I Cabarrocas, P., Chahed, L., Drevillon, B., Theye, M.L. (1988) Light-induced effects on the optical absorption of a-Si:H. Journal of Non-Crystalline Solids, 104 (1) 59-61 doi:10.1016/0022-3093(88)90181-0
Weil, R., Abdulhalim, I., Beserman, R., Janai, M., Pratt, B. (1985) Comparison of strain in glow discharge a-Si:F and a-Si:H. Journal of Non-Crystalline Solids, 77. 261-264 doi:10.1016/0022-3093(85)90653-2
Lucovsky, G. (1985) Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy films. Journal of Non-Crystalline Solids, 76 (1) 173-186 doi:10.1016/0022-3093(85)90061-4
Tiedje, T., Wronski, C.R., Persans, P., Abeles, B. (1985) Recent experimental results on a-Si:H/a-Ge:H superlattice structures. Journal of Non-Crystalline Solids, 77. 1031-1040 doi:10.1016/0022-3093(85)90837-3
Roca i Cabarrocas, P. (1993) Towards high deposition rates of a-Si:H: The limiting factors. Journal of Non-Crystalline Solids, 164. 37-42 doi:10.1016/0022-3093(93)90486-h
Payson, J.Scott, Ross, Randall C (1985) Optical and electronic properties of plasma deposited a-Ge:H. Journal of Non-Crystalline Solids, 77. 579-582 doi:10.1016/0022-3093(85)90727-6
Lucovsky, G., Chao, S.S., Yang, J., Tyler, J.E., Czubatyj, W. (1984) Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H. Journal of Non-Crystalline Solids, 66 (1) 99-104 doi:10.1016/0022-3093(84)90305-3
Furukawa, Shoji, Matsumoto, Nobuo (1985) Glow discharge-produced binary Si:H alloy containing polysilane. Journal of Non-Crystalline Solids, 69 (2) 203-206 doi:10.1016/0022-3093(85)90021-3
 
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