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Lucovsky, G., Chao, S.S., Yang, J., Tyler, J.E., Czubatyj, W. (1984) Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H. Journal of Non-Crystalline Solids, 66 (1) 99-104 doi:10.1016/0022-3093(84)90305-3

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Reference TypeJournal (article/letter/editorial)
TitleDifferences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H
JournalJournal of Non-Crystalline Solids
AuthorsLucovsky, G.Author
Chao, S.S.Author
Yang, J.Author
Tyler, J.E.Author
Czubatyj, W.Author
Year1984 (July)Volume66
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(84)90305-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID623100Long-form Identifiermindat:1:5:623100:6
GUID0
Full ReferenceLucovsky, G., Chao, S.S., Yang, J., Tyler, J.E., Czubatyj, W. (1984) Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H. Journal of Non-Crystalline Solids, 66 (1) 99-104 doi:10.1016/0022-3093(84)90305-3
Plain TextLucovsky, G., Chao, S.S., Yang, J., Tyler, J.E., Czubatyj, W. (1984) Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H. Journal of Non-Crystalline Solids, 66 (1) 99-104 doi:10.1016/0022-3093(84)90305-3
In(1984, July) Journal of Non-Crystalline Solids Vol. 66 (1) Elsevier BV

See Also

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Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., Czubatyj, W. (1983) Vibrational properties of deuterated a-Si alloys. Journal of Non-Crystalline Solids, 59. 609-612 doi:10.1016/0022-3093(83)90657-9
Lucovsky, G., Chao, S. S., Yang, J., Tyler, J. E., Ross, R. C., Czubatyj, and W. (1985) Chemical bonding of hydrogen and oxygen in glow-discharge–deposited thin films ofa-Ge:H anda-Ge:(H,O) Physical Review B, 31 (4) 2190-2197 doi:10.1103/physrevb.31.2190
Lucovsky, G. (1985) Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy films. Journal of Non-Crystalline Solids, 76 (1) 173-186 doi:10.1016/0022-3093(85)90061-4
Lucovsky, G., Yang, J., Chao, S. S., Tyler, J. E., Czubatyj, W. (1983) Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films. Physical Review B, 28 (6) 3225-3233 doi:10.1103/physrevb.28.3225
Antoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2
Lucovsky, G., Yang, J., Chao, S. S., Tyler, J. E., Czubatyj, W. (1983) Nitrogen-bonding environments in glow-discharge—depositeda−Si:Hfilms. Physical Review B, 28 (6) 3234-3240 doi:10.1103/physrevb.28.3234
Morgan, M., Jansen, F., Grammatica, S., Kuhman, D., Mort, J. (1984) Transport properties of a-Si:H prepared by r.f. and d.c. glow discharge. Journal of Non-Crystalline Solids, 66 (1) 77-80 doi:10.1016/0022-3093(84)90301-6
Zentai, Gy., Füstöss-Wégner, M. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids, 77. 225-228 doi:10.1016/0022-3093(85)90644-1
Lucovsky, G, Lin, S.Y, Richard, P.D, Chao, S.S, Takagi, Y, Pai, P, Keem, J.E, Tyler, J.E (1985) Local atomic structure of silicon suboxides (SiOx, x < 2) Journal of Non-Crystalline Solids, 75 (1) 429-434 doi:10.1016/0022-3093(85)90253-4
Vanier, P.E., Tafto, J., Rajeswaran, G., Kampas, F.J. (1984) Nucleation and growth of N- and P-type microcrystals in low-temperature glow-discharge deposited silicon films. Journal of Non-Crystalline Solids, 66 (1) 31-37 doi:10.1016/0022-3093(84)90294-1
Moller, G., Winterling, G., Kalbitzer, S., Reinelt, M. (1983) Hydrogen incorporation, doping and thickness dependent conductivity in glow discharge deposited a-Si:H films. Journal of Non-Crystalline Solids, 59. 469-472 doi:10.1016/0022-3093(83)90622-1
 
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