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Yamasaki, S., Kuroda, S., Okushi, H., Tanaka, K. (1985) Energy location of ESR hyperfine centers of P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 339-342 doi:10.1016/0022-3093(85)90670-2

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Reference TypeJournal (article/letter/editorial)
TitleEnergy location of ESR hyperfine centers of P-doped a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsYamasaki, S.Author
Kuroda, S.Author
Okushi, H.Author
Tanaka, K.Author
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90670-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID625804Long-form Identifiermindat:1:5:625804:1
GUID0
Full ReferenceYamasaki, S., Kuroda, S., Okushi, H., Tanaka, K. (1985) Energy location of ESR hyperfine centers of P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 339-342 doi:10.1016/0022-3093(85)90670-2
Plain TextYamasaki, S., Kuroda, S., Okushi, H., Tanaka, K. (1985) Energy location of ESR hyperfine centers of P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 339-342 doi:10.1016/0022-3093(85)90670-2
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

See Also

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Yamasaki, S, Kuroda, S, Isoya, J, Okushi, H, Tanaka, K (1985) ENDOR and ESEEM study of phosphorus-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 727-730 doi:10.1016/0022-3093(85)90761-6
Tajima, M, Yamasaki, S, Okushi, H, Tanaka, K (1985) Direct evidence for strong electron-phonon interaction on deep trapping process in P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 603-606 doi:10.1016/0022-3093(85)90730-6
Okushi, H, Yamasaki, S, Matsuda, A, Tanaka, K (1985) Measurement of spatial distribution of gap states originating from dangling bonds near metal/a-Si:H interface. Journal of Non-Crystalline Solids, 77. 1015-1018 doi:10.1016/0022-3093(85)90833-6
Umeda, T, Yamasaki, S, Isoya, J, Matsuda, A, Tanaka, K (1998) Energy location of light-induced ESR centers in undoped a-Si:H. Journal of Non-Crystalline Solids, 227. 353-357 doi:10.1016/s0022-3093(98)00075-1
Nitta, S., Sakaida, M. (1985) New ESR signals in P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 723-726 doi:10.1016/0022-3093(85)90760-4
Okushi, H., Asano, A., Miyakawa, M., Yamasaki, S., Tanaka, K. (1983) Photo-induced transient localized states in a-Si:H. Journal of Non-Crystalline Solids, 59. 393-396 doi:10.1016/0022-3093(83)90603-8
Matsuda, A., Nakagawa, K., Tanaka, K., Matsumura, M., Yamasaki, S., Okushi, H., Iizima, S. (1980) Plasma spectroscopy control and analysis of a-Si:H deposition. Journal of Non-Crystalline Solids, 35. 183-188 doi:10.1016/0022-3093(80)90591-8
Okushi, H., Miyakawa, M., Okuno, T., Yamasaki, S., Tokumaru, Y., Tanaka, K. (1983) Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:H. Journal of Non-Crystalline Solids, 59. 437-440 doi:10.1016/0022-3093(83)90614-2
Tanaka, K., Yamasaki, S., Nakagawa, K., Matsuda, A., Okushi, H., Matsumura, M., Iizima, S. (1980) The role of argon involved in plasma-deposited amorphous Si:H films. Journal of Non-Crystalline Solids, 35. 475-480 doi:10.1016/0022-3093(80)90640-7
Yamazaki, S., Kuroda, S., Isoya, J., Tanaka, K. (1987) 1H-ENDOR-detected ESR spectra of P- and B-dope a-Si:H. Journal of Non-Crystalline Solids, 97. 691-694 doi:10.1016/0022-3093(87)90163-3
Biegelsen, David K., Stutzmann, Martin (1985) 29Si hyperfine measurements in a-Si:H. Journal of Non-Crystalline Solids, 77. 703-706 doi:10.1016/0022-3093(85)90755-0
 
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