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Meaudre, R, Mezhoudi, A, Meaudre, M, Tardy, J (1985) Effects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering. Journal of Non-Crystalline Solids, 77. 953-956 doi:10.1016/0022-3093(85)90819-1

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Reference TypeJournal (article/letter/editorial)
TitleEffects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering
JournalJournal of Non-Crystalline Solids
AuthorsMeaudre, RAuthor
Mezhoudi, AAuthor
Meaudre, MAuthor
Tardy, JAuthor
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90819-1Search in ResearchGate
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Mindat Ref. ID626296Long-form Identifiermindat:1:5:626296:3
GUID0
Full ReferenceMeaudre, R, Mezhoudi, A, Meaudre, M, Tardy, J (1985) Effects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering. Journal of Non-Crystalline Solids, 77. 953-956 doi:10.1016/0022-3093(85)90819-1
Plain TextMeaudre, R, Mezhoudi, A, Meaudre, M, Tardy, J (1985) Effects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering. Journal of Non-Crystalline Solids, 77. 953-956 doi:10.1016/0022-3093(85)90819-1
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

See Also

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Meaudre, R., Mezhoudi, A., Meaudre, M., Tardy, J. (1986) Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds. Journal of Non-Crystalline Solids, 87 (3) 321-342 doi:10.1016/s0022-3093(86)80006-0
Meaudre, R., Mezhoudi, A. (1984) Conduction-band tail width and minimum metallic conductivity in a-SixN1−x:H films studied by photoconduction and optical absorption. Philosophical Magazine B, 50 (6). doi:10.1080/13642818408238887
Meaudre, M., Meaudre, R. (1984) Electrical transport in RF-sputtered SiO2 films A review. Journal of Non-Crystalline Solids, 68 (2) 281-299 doi:10.1016/0022-3093(84)90012-7
Meaudre, R., Meaudre, M. (1981) DC current transport in rf sputtered SiO2 films in the temperature range 77–357 K. Journal of Non-Crystalline Solids, 46 (1) 71-79 doi:10.1016/0022-3093(81)90075-2
Meaudre, M., Meaudre, R., Deguin, A. (1979) Use of a small-voltage electrical response to measure sodium motion in rf sputtered SiO2 films. Journal of Non-Crystalline Solids, 33 (3) 391-403 doi:10.1016/0022-3093(79)90112-1
Paillard, V., Meaudre, M., Melinon, P., Dupuis, V., Perez, J.P., Vignoli, S., Perez, A., Meaudre, R. (1995) DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition. Journal of Non-Crystalline Solids, 191 (1) 174-183 doi:10.1016/0022-3093(95)00294-4
Meaudre, R, Jensen, P, Meaudre, M, Godet, C (1989) The preexponential factor of the electrical conductivity of undoped amorphous silicon. Journal of Non-Crystalline Solids, 114. 360-362 doi:10.1016/0022-3093(89)90163-4
Meaudre, M., Meaudre, R., Jensen, P. (1990) Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer. Journal of Non-Crystalline Solids, 122 (3) 312-317 doi:10.1016/0022-3093(90)90997-z
Tardy, J., Meaudre, R. (1983) Influence of substrate bias on the optical properties of amorphous hydrogenated silicon films prepared by sputtering. Philosophical Magazine B, 48 (6). 571-586 doi:10.1080/13642818308227557
Meaudre, M., Meaudre, R., Hauser, J.J. (1983) High field variable range hopping of hole-like polarons in RF sputtered SiO2 films. Journal of Non-Crystalline Solids, 58 (1) 145-150 doi:10.1016/0022-3093(83)90110-2
Meaudre, R., Meaudre, M. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 799-802 doi:10.1016/0022-3093(87)90191-8
 
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