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Meaudre, M., Meaudre, R., Jensen, P. (1990) Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer. Journal of Non-Crystalline Solids, 122 (3) 312-317 doi:10.1016/0022-3093(90)90997-z

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Reference TypeJournal (article/letter/editorial)
TitleMetastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer
JournalJournal of Non-Crystalline Solids
AuthorsMeaudre, M.Author
Meaudre, R.Author
Jensen, P.Author
Year1990 (August)Volume122
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(90)90997-zSearch in ResearchGate
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Mindat Ref. ID629953Long-form Identifiermindat:1:5:629953:2
GUID0
Full ReferenceMeaudre, M., Meaudre, R., Jensen, P. (1990) Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer. Journal of Non-Crystalline Solids, 122 (3) 312-317 doi:10.1016/0022-3093(90)90997-z
Plain TextMeaudre, M., Meaudre, R., Jensen, P. (1990) Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer. Journal of Non-Crystalline Solids, 122 (3) 312-317 doi:10.1016/0022-3093(90)90997-z
In(1990, August) Journal of Non-Crystalline Solids Vol. 122 (3) Elsevier BV

See Also

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Meaudre, R, Jensen, P, Meaudre, M, Godet, C (1989) The preexponential factor of the electrical conductivity of undoped amorphous silicon. Journal of Non-Crystalline Solids, 114. 360-362 doi:10.1016/0022-3093(89)90163-4
Meaudre, R., Meaudre, M. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 799-802 doi:10.1016/0022-3093(87)90191-8
Jensen, P, Meaudre, R, Meaudre, M (1990) The discontinuity in the conductivity characteristics of undoped a-Si:H: statistical shift or metastability?. Journal of Physics: Condensed Matter, 2 (22). 4785-4794 doi:10.1088/0953-8984/2/22/001
Meaudre, R., Jensen, P., Meaudre, M. (1988) Metastable effects in the dc conductivity of undoped glow discharge and sputtered hydrogenated amorphous silicon. Physical Review B, 38 (17) 12449-12456 doi:10.1103/physrevb.38.12449
Meaudre, M., Meaudre, R. (1984) Electrical transport in RF-sputtered SiO2 films A review. Journal of Non-Crystalline Solids, 68 (2) 281-299 doi:10.1016/0022-3093(84)90012-7
Meaudre, M., Jensen, P., Meaudre, R. (1991) Metastable effects induced by thermal quenching in undoped amorphous silicon. Philosophical Magazine B, 63 (4). 815-837 doi:10.1080/13642819108205540
Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Tanidi, S., Bouizem, Y., Theye, M.L. (1991) Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silane. Journal of Non-Crystalline Solids, 137. 171-174 doi:10.1016/s0022-3093(05)80083-3
Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M (1998) Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227. 96-99 doi:10.1016/s0022-3093(98)00217-8
Meaudre, M., Meaudre, R., Deguin, A. (1979) Use of a small-voltage electrical response to measure sodium motion in rf sputtered SiO2 films. Journal of Non-Crystalline Solids, 33 (3) 391-403 doi:10.1016/0022-3093(79)90112-1
Jensen, P, Meaudre, R (1990) The kink in the conductivity characteristics of undoped a-Si:H-a comprehensive picture. Journal of Physics: Condensed Matter, 2 (51). 10411-10415 doi:10.1088/0953-8984/2/51/014
Meaudre, R., Meaudre, M. (1981) DC current transport in rf sputtered SiO2 films in the temperature range 77–357 K. Journal of Non-Crystalline Solids, 46 (1) 71-79 doi:10.1016/0022-3093(81)90075-2
 
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