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Meaudre, M., Meaudre, R. (1984) Electrical transport in RF-sputtered SiO2 films A review. Journal of Non-Crystalline Solids, 68 (2) 281-299 doi:10.1016/0022-3093(84)90012-7

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Reference TypeJournal (article/letter/editorial)
TitleElectrical transport in RF-sputtered SiO2 films A review
JournalJournal of Non-Crystalline Solids
AuthorsMeaudre, M.Author
Meaudre, R.Author
Year1984 (November)Volume68
Issue2
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(84)90012-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID623687Long-form Identifiermindat:1:5:623687:2
GUID0
Full ReferenceMeaudre, M., Meaudre, R. (1984) Electrical transport in RF-sputtered SiO2 films A review. Journal of Non-Crystalline Solids, 68 (2) 281-299 doi:10.1016/0022-3093(84)90012-7
Plain TextMeaudre, M., Meaudre, R. (1984) Electrical transport in RF-sputtered SiO2 films A review. Journal of Non-Crystalline Solids, 68 (2) 281-299 doi:10.1016/0022-3093(84)90012-7
In(1984, November) Journal of Non-Crystalline Solids Vol. 68 (2) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Meaudre, R., Meaudre, M. (1981) DC current transport in rf sputtered SiO2 films in the temperature range 77–357 K. Journal of Non-Crystalline Solids, 46 (1) 71-79 doi:10.1016/0022-3093(81)90075-2
Meaudre, M., Meaudre, R., Deguin, A. (1979) Use of a small-voltage electrical response to measure sodium motion in rf sputtered SiO2 films. Journal of Non-Crystalline Solids, 33 (3) 391-403 doi:10.1016/0022-3093(79)90112-1
Meaudre, M., Meaudre, R., Hauser, J.J. (1983) High field variable range hopping of hole-like polarons in RF sputtered SiO2 films. Journal of Non-Crystalline Solids, 58 (1) 145-150 doi:10.1016/0022-3093(83)90110-2
Meaudre, R, Jensen, P, Meaudre, M, Godet, C (1989) The preexponential factor of the electrical conductivity of undoped amorphous silicon. Journal of Non-Crystalline Solids, 114. 360-362 doi:10.1016/0022-3093(89)90163-4
Meaudre, R, Mezhoudi, A, Meaudre, M, Tardy, J (1985) Effects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering. Journal of Non-Crystalline Solids, 77. 953-956 doi:10.1016/0022-3093(85)90819-1
Vignoli, S, Fontcuberta i Morral, A, Butté, R, Meaudre, R, Meaudre, M (2002) Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 220-225 doi:10.1016/s0022-3093(01)00951-6
Meaudre, M., Meaudre, R. (1984) Mechanisms for ac conduction in rf sputtered SiO2films. Physical Review B, 29 (12) 7014-7019 doi:10.1103/physrevb.29.7014
Meaudre, R., Mezhoudi, A., Meaudre, M., Tardy, J. (1986) Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds. Journal of Non-Crystalline Solids, 87 (3) 321-342 doi:10.1016/s0022-3093(86)80006-0
Meaudre, M, Meaudre, R, Vignoli, S, Marty, O (2002) Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents. Journal of Non-Crystalline Solids, 299. 626-631 doi:10.1016/s0022-3093(01)00970-x
Meaudre, R., Meaudre, M. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 799-802 doi:10.1016/0022-3093(87)90191-8
Meaudre, M., Meaudre, R., Jensen, P. (1990) Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer. Journal of Non-Crystalline Solids, 122 (3) 312-317 doi:10.1016/0022-3093(90)90997-z
 
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