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Meaudre, M, Meaudre, R, Vignoli, S, Marty, O (2002) Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents. Journal of Non-Crystalline Solids, 299. 626-631 doi:10.1016/s0022-3093(01)00970-x

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Reference TypeJournal (article/letter/editorial)
TitleDensity of states in hydrogenated microcrystalline silicon determined by space charge limited currents
JournalJournal of Non-Crystalline Solids
AuthorsMeaudre, MAuthor
Meaudre, RAuthor
Vignoli, SAuthor
Marty, OAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)00970-xSearch in ResearchGate
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Mindat Ref. ID640146Long-form Identifiermindat:1:5:640146:1
GUID0
Full ReferenceMeaudre, M, Meaudre, R, Vignoli, S, Marty, O (2002) Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents. Journal of Non-Crystalline Solids, 299. 626-631 doi:10.1016/s0022-3093(01)00970-x
Plain TextMeaudre, M, Meaudre, R, Vignoli, S, Marty, O (2002) Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents. Journal of Non-Crystalline Solids, 299. 626-631 doi:10.1016/s0022-3093(01)00970-x
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

See Also

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Vignoli, S, Fontcuberta i Morral, A, Butté, R, Meaudre, R, Meaudre, M (2002) Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 220-225 doi:10.1016/s0022-3093(01)00951-6
Butté, R, Vignoli, S, Meaudre, M, Meaudre, R, Marty, O, Saviot, L, Roca i Cabarrocas, P (2000) Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C. Journal of Non-Crystalline Solids, 266. 263-268 doi:10.1016/s0022-3093(99)00833-9
Roy, D, Longeaud, C, Saadane, O, Gueunier, M.E, Vignoli, S, Butté, R, Meaudre, R, Meaudre, M (2002) Evolution with light-soaking of polymorphous material prepared at 423 K. Journal of Non-Crystalline Solids, 299. 482-486 doi:10.1016/s0022-3093(01)01020-1
Meaudre, M., Meaudre, R. (1998) Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 301-305 doi:10.1016/s0022-3093(98)00068-4
Vignoli, S., Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Godet, C., Morin, P. (1996) Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions. Journal of Non-Crystalline Solids, 198. 474-477 doi:10.1016/0022-3093(95)00739-3
Smorgonskaya, E, Kyutt, R, Danishevskii, A, Jardin, C, Meaudre, R, Marty, O, Gordeev, S, Grechinskaya, A (2002) X-ray and HRTEM structural studies of bulk nanoporous carbon materials produced from carbides. Journal of Non-Crystalline Solids, 299. 810-814 doi:10.1016/s0022-3093(01)00986-3
Vignoli, S., Meaudre, R., Meaudre, M., Chanel, L., Roca i Cabarrocas, P. (1993) Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures. Journal of Non-Crystalline Solids, 164. 191-194 doi:10.1016/0022-3093(93)90523-z
Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M (1998) Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227. 96-99 doi:10.1016/s0022-3093(98)00217-8
Meaudre, R., Mezhoudi, A., Meaudre, M., Tardy, J. (1986) Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds. Journal of Non-Crystalline Solids, 87 (3) 321-342 doi:10.1016/s0022-3093(86)80006-0
Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Longeaud, C., Kleider, J. P., Roca i Cabarrocas, P. (1999) Midgap density of states in hydrogenated polymorphous silicon. Journal of Applied Physics, 86 (2). 946-950 doi:10.1063/1.370829
Meaudre, R., Meaudre, M. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 799-802 doi:10.1016/0022-3093(87)90191-8
 
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