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Meaudre, M., Meaudre, R. (1998) Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 301-305 doi:10.1016/s0022-3093(98)00068-4

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Reference TypeJournal (article/letter/editorial)
TitleKinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsMeaudre, M.Author
Meaudre, R.Author
Year1998 (May)Volume227
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(98)00068-4Search in ResearchGate
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Mindat Ref. ID637064Long-form Identifiermindat:1:5:637064:4
GUID0
Full ReferenceMeaudre, M., Meaudre, R. (1998) Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 301-305 doi:10.1016/s0022-3093(98)00068-4
Plain TextMeaudre, M., Meaudre, R. (1998) Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 301-305 doi:10.1016/s0022-3093(98)00068-4
In(1998) Journal of Non-Crystalline Solids Vol. 227. Elsevier BV

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Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M (1998) Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227. 96-99 doi:10.1016/s0022-3093(98)00217-8
Vignoli, S., Meaudre, R., Meaudre, M., Chanel, L., Roca i Cabarrocas, P. (1993) Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures. Journal of Non-Crystalline Solids, 164. 191-194 doi:10.1016/0022-3093(93)90523-z
Meaudre, M, Meaudre, R, Vignoli, S, Marty, O (2002) Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents. Journal of Non-Crystalline Solids, 299. 626-631 doi:10.1016/s0022-3093(01)00970-x
Meaudre, R., Meaudre, M. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 97. 799-802 doi:10.1016/0022-3093(87)90191-8
Vignoli, S, Fontcuberta i Morral, A, Butté, R, Meaudre, R, Meaudre, M (2002) Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 220-225 doi:10.1016/s0022-3093(01)00951-6
Meaudre, R, Jensen, P, Meaudre, M, Godet, C (1989) The preexponential factor of the electrical conductivity of undoped amorphous silicon. Journal of Non-Crystalline Solids, 114. 360-362 doi:10.1016/0022-3093(89)90163-4
Butté, R, Vignoli, S, Meaudre, M, Meaudre, R, Marty, O, Saviot, L, Roca i Cabarrocas, P (2000) Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C. Journal of Non-Crystalline Solids, 266. 263-268 doi:10.1016/s0022-3093(99)00833-9
Meaudre, R., Mezhoudi, A., Meaudre, M., Tardy, J. (1986) Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds. Journal of Non-Crystalline Solids, 87 (3) 321-342 doi:10.1016/s0022-3093(86)80006-0
Vignoli, S., Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Godet, C., Morin, P. (1996) Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions. Journal of Non-Crystalline Solids, 198. 474-477 doi:10.1016/0022-3093(95)00739-3
Vignoli, S., Meaudre, R., Meaudre, M. (1994) Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination. Physical Review B, 50 (11) 7378-7383 doi:10.1103/physrevb.50.7378
Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Tanidi, S., Bouizem, Y., Theye, M.L. (1991) Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silane. Journal of Non-Crystalline Solids, 137. 171-174 doi:10.1016/s0022-3093(05)80083-3
 
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