Vignoli, S., Meaudre, R., Meaudre, M., Chanel, L., Roca i Cabarrocas, P. (1993) Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures. Journal of Non-Crystalline Solids, 164. 191-194 doi:10.1016/0022-3093(93)90523-z

See Also

These are possibly similar items as determined by title/reference text matching only.

	Vignoli, S., Meaudre, R., Meaudre, M. (1996) Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium‐silane mixtures. Philosophical Magazine B, 73 (2). 261-276 doi:10.1080/01418639609365823
	Meaudre, R., Meaudre, M., Vignoli, S., Cabarrocas, P. Roca, Bouizem, Y., Theye, M. L. (1993) Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silane. Philosophical Magazine B, 67 (4). 497-511 doi:10.1080/13642819308207688
	Vignoli, S., Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Godet, C., Morin, P. (1996) Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions. Journal of Non-Crystalline Solids, 198. 474-477 doi:10.1016/0022-3093(95)00739-3
	Butté, R, Vignoli, S, Meaudre, M, Meaudre, R, Marty, O, Saviot, L, Roca i Cabarrocas, P (2000) Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C. Journal of Non-Crystalline Solids, 266. 263-268 doi:10.1016/s0022-3093(99)00833-9
	Meaudre, R., Meaudre, M., Roca i Cabarrocas, P., Tanidi, S., Bouizem, Y., Theye, M.L. (1991) Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silane. Journal of Non-Crystalline Solids, 137. 171-174 doi:10.1016/s0022-3093(05)80083-3
	Meaudre, R., Meaudre, M., Roca i Cabarrocas, P. (1993) Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by plasma‐enhanced chemical vapor deposition from He‐diluted silane. Applied Physics Letters, 62 (6). 594-596 doi:10.1063/1.108866
	Meaudre, M., Meaudre, R. (1998) Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 301-305 doi:10.1016/s0022-3093(98)00068-4
	Kleider, J.P., Longeaud, C., Roca i Cabarrocas, P. (1993) Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition rates. Journal of Non-Crystalline Solids, 164. 403-406 doi:10.1016/0022-3093(93)90575-i
	Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M (1998) Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227. 96-99 doi:10.1016/s0022-3093(98)00217-8
	Shirai, H, Drévillon, B, Layadi, N, Roca i Cabarrocas, P (1993) In situ UV-visible and Infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 164. 119-122 doi:10.1016/0022-3093(93)90506-s
	Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Longeaud, C., Kleider, J. P., Roca i Cabarrocas, P. (1999) Midgap density of states in hydrogenated polymorphous silicon. Journal of Applied Physics, 86 (2). 946-950 doi:10.1063/1.370829