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Coluzza, C., Fortunato, G., Quaresima, C., Capozi, M., Perfetti, P. (1985) Photoemission studies of a-SiNx:H/a-Si:H heterojunctions. Journal of Non-Crystalline Solids, 77. 999-1002 doi:10.1016/0022-3093(85)90829-4

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Reference TypeJournal (article/letter/editorial)
TitlePhotoemission studies of a-SiNx:H/a-Si:H heterojunctions
JournalJournal of Non-Crystalline Solids
AuthorsColuzza, C.Author
Fortunato, G.Author
Quaresima, C.Author
Capozi, M.Author
Perfetti, P.Author
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90829-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID626328Long-form Identifiermindat:1:5:626328:1
GUID0
Full ReferenceColuzza, C., Fortunato, G., Quaresima, C., Capozi, M., Perfetti, P. (1985) Photoemission studies of a-SiNx:H/a-Si:H heterojunctions. Journal of Non-Crystalline Solids, 77. 999-1002 doi:10.1016/0022-3093(85)90829-4
Plain TextColuzza, C., Fortunato, G., Quaresima, C., Capozi, M., Perfetti, P. (1985) Photoemission studies of a-SiNx:H/a-Si:H heterojunctions. Journal of Non-Crystalline Solids, 77. 999-1002 doi:10.1016/0022-3093(85)90829-4
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

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Quaresima, C., Perfetti, P., Paparazzo, E., Capozi, M., Vaccarezza, C., Russo, B., Coluzza, C. (1987) Effect of hydrogen on SiOx and SiOxSi interface. Journal of Non-Crystalline Solids, 97. 979-982 doi:10.1016/0022-3093(87)90236-5
Giannetti, C., Coluzza, C., Frova, A., Fanfoni, M., Capozi, M., Quaresima, C., Perfetti, P. (1989) SnO2 reduction by hydrogen bombardment and its effect on SnO2/a-Si interfaces. Journal of Non-Crystalline Solids, 115 (1) 204-206 doi:10.1016/0022-3093(89)90405-5
Sala, D.Della, Coluzza, C, Fortunato, G, Evangelisti, F (1985) Infrared and optical study of a-SiN alloys. Journal of Non-Crystalline Solids, 77. 933-936 doi:10.1016/0022-3093(85)90814-2
Coluzza, C., Lama, F., Frova, A., Perfetti, P., Quaresima, C., Capozi, M. (1988) Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission. Journal of Applied Physics, 64 (6). 3304-3306 doi:10.1063/1.341506
UGUR, H, FRITZCHE, H (1985) Anomalous electronic transport effects in a-Si:H/a-SiNx:H multilayers☆. Journal of Non-Crystalline Solids, 77. 1085-1088 doi:10.1016/0022-3093(85)90846-4
Evangelisti, F. (1985) Photoemission studies of amorphous semiconductor heterojunctions. Journal of Non-Crystalline Solids, 77. 969-977 doi:10.1016/0022-3093(85)90823-3
Perfetti, P, Quaresima, C, Capozi, M, Coluzza, C, Fortunato, G (1987) Evidence for localized p-like states at the conduction band edge of amorphous silicon nitride from resonant photoemission. Physica Scripta, 36 (1). 184-186 doi:10.1088/0031-8949/36/1/031
Robertson, J., Powell, M.J. (1985) Defect model of charge transfer doping at a-SiNx:H/a-Si:H interfaces. Journal of Non-Crystalline Solids, 77. 1007-1010 doi:10.1016/0022-3093(85)90831-2
Fortunato, G., D’Amico, A., Coluzza, C., Sette, F., Capasso, C., Patella, F., Quaresima, C., Perfetti, P. (1984) Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a‐Si:H diodes by photoemission with synchrotron radiation. Applied Physics Letters, 44 (9). 887-889 doi:10.1063/1.94967
Cheng, Ruguang, Wen, Shulin, Feng, Jingwei, Fritzsche, H. (1985) Transmission electron microscopy of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 77. 1061-1064 doi:10.1016/0022-3093(85)90840-3
Nishikawa, S., Kakinuma, H., Fukuda, H., Watanabe, T., Nihei, K. (1985) Optical properties of a-Si:H/a-Si1−xCx:H and a-Si:H/a-SiNx:H superlattice. Journal of Non-Crystalline Solids, 77. 1077-1080 doi:10.1016/0022-3093(85)90844-0
 
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