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Cheng, Ruguang, Wen, Shulin, Feng, Jingwei, Fritzsche, H. (1985) Transmission electron microscopy of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 77. 1061-1064 doi:10.1016/0022-3093(85)90840-3

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Reference TypeJournal (article/letter/editorial)
TitleTransmission electron microscopy of a-Si:H/a-SiNx:H multilayers
JournalJournal of Non-Crystalline Solids
AuthorsCheng, RuguangAuthor
Wen, ShulinAuthor
Feng, JingweiAuthor
Fritzsche, H.Author
Year1985 (December)Volume77
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(85)90840-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID626362Long-form Identifiermindat:1:5:626362:5
GUID0
Full ReferenceCheng, Ruguang, Wen, Shulin, Feng, Jingwei, Fritzsche, H. (1985) Transmission electron microscopy of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 77. 1061-1064 doi:10.1016/0022-3093(85)90840-3
Plain TextCheng, Ruguang, Wen, Shulin, Feng, Jingwei, Fritzsche, H. (1985) Transmission electron microscopy of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 77. 1061-1064 doi:10.1016/0022-3093(85)90840-3
In(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

See Also

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Wang, Shulin, Fritzsche, Hellmut, Cheng, Ruguang (1989) Annealing dependence of PDS of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 114. 741-743 doi:10.1016/0022-3093(89)90706-0
Cheng, Ruguang, Wen, Shulin, Feng, Jingwei, Fritzsche, H. (1985) Transmission electron microscopy study of periodic amorphous multilayers. Applied Physics Letters, 46 (6). 592-594 doi:10.1063/1.95550
UGUR, H, FRITZCHE, H (1985) Anomalous electronic transport effects in a-Si:H/a-SiNx:H multilayers☆. Journal of Non-Crystalline Solids, 77. 1085-1088 doi:10.1016/0022-3093(85)90846-4
Nakayama, Y., Stradins, P., Fritzsche, H. (1993) Metastable centers and photoconduction in a-SiNx:H. Journal of Non-Crystalline Solids, 164. 1061-1064 doi:10.1016/0022-3093(93)91181-2
Fritzsche, H. (1985) Density-of-states distribution in the mobility gap of a-Si:H. Journal of Non-Crystalline Solids, 77. 273-280 doi:10.1016/0022-3093(85)90656-8
Nishikawa, S., Kakinuma, H., Fukuda, H., Watanabe, T., Nihei, K. (1985) Optical properties of a-Si:H/a-Si1−xCx:H and a-Si:H/a-SiNx:H superlattice. Journal of Non-Crystalline Solids, 77. 1077-1080 doi:10.1016/0022-3093(85)90844-0
Robertson, J., Powell, M.J. (1985) Defect model of charge transfer doping at a-SiNx:H/a-Si:H interfaces. Journal of Non-Crystalline Solids, 77. 1007-1010 doi:10.1016/0022-3093(85)90831-2
Coluzza, C., Fortunato, G., Quaresima, C., Capozi, M., Perfetti, P. (1985) Photoemission studies of a-SiNx:H/a-Si:H heterojunctions. Journal of Non-Crystalline Solids, 77. 999-1002 doi:10.1016/0022-3093(85)90829-4
Zhou-yao, Zhang, Ru-guang, Cheng, Fritzsche, H. (1987) Electrical properties of a-Si:H/a-SiCx:H multilayers. Journal of Non-Crystalline Solids, 97. 923-926 doi:10.1016/0022-3093(87)90222-5
Abeles, B, Persans, P.D, Stasiewski, H.S, Yang, L, Lanford, W (1985) Structure of interfaces in a-Si:H/a-Sinx:H superlattices. Journal of Non-Crystalline Solids, 77. 1065-1068 doi:10.1016/0022-3093(85)90841-5
Kunji, Chen, Guomin, Mao, Duan, Feng, Ying, Yan, Jiafang, Du, Zhifeng, Li, Hong, Chen, Fritzsche, H. (1987) Quasiperiodic a-Si:H/a-SiNx:H multilayer structures. Journal of Non-Crystalline Solids, 97. 341-344 doi:10.1016/0022-3093(87)90081-0
 
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