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Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer
JournalPhysics of the Solid State
AuthorsAntipov, V. V.Author
Kukushkin, S. A.Author
Osipov, A. V.Author
Year2017 (February)Volume59
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783417020020Search in ResearchGate
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Mindat Ref. ID6156949Long-form Identifiermindat:1:5:6156949:2
GUID0
Full ReferenceAntipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Plain TextAntipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
In(n.d.) Physics of the Solid State Vol. 59. Pleiades Publishing Ltd

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Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P. (2018) Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer. Physics of the Solid State, 60. 504-509 doi:10.1134/s1063783418030022
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State, 58. 629-632 doi:10.1134/s1063783416030033
Egorov, V. K., Egorov, E. V., Kukushkin, S. A., Osipov, A. V. (2017) Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide. Physics of the Solid State, 59. 773-779 doi:10.1134/s1063783417040072
Kukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130
Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
Grudinkin, S. A., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2017) IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Physics of the Solid State, 59. 2430-2435 doi:10.1134/s1063783417120186
Kukushkin, S. A., Lukyanov, A. V., Osipov, A. V., Feoktistov, N. A. (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters, 40. 36-39 doi:10.1134/s1063785014010088
Kukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x
Kukushkin, S. A., Osipov, A. V. (2008) New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment. Physics of the Solid State, 50. 1238-1245 doi:10.1134/s1063783408070081
Kitaev, Yu. E., Kukushkin, S. A., Osipov, A. V. (2017) Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide. Physics of the Solid State, 59. 28-33 doi:10.1134/s1063783417010164
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2019) Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters, 45. 1075-1077 doi:10.1134/s1063785019110026
 
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