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Kukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130

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Reference TypeJournal (article/letter/editorial)
TitleA quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon
JournalPhysics of the Solid State
AuthorsKukushkin, S. A.Author
Osipov, A. V.Author
Year2017 (June)Volume59
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783417060130Search in ResearchGate
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Mindat Ref. ID6157089Long-form Identifiermindat:1:5:6157089:6
GUID0
Full ReferenceKukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130
Plain TextKukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130
In(n.d.) Physics of the Solid State Vol. 59. Pleiades Publishing Ltd

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Egorov, V. K., Egorov, E. V., Kukushkin, S. A., Osipov, A. V. (2017) Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide. Physics of the Solid State, 59. 773-779 doi:10.1134/s1063783417040072
Grudinkin, S. A., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2017) IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Physics of the Solid State, 59. 2430-2435 doi:10.1134/s1063783417120186
Kukushkin, S. A., Osipov, A. V. (2016) Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon. Physics of the Solid State, 58. 747-751 doi:10.1134/s1063783416040120
Kukushkin, S. A., Osipov, A. V. (2008) New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment. Physics of the Solid State, 50. 1238-1245 doi:10.1134/s1063783408070081
Kukushkin, S. A., Osipov, A. V. (2017) The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms. Technical Physics Letters, 43. 631-634 doi:10.1134/s1063785017070094
Kitaev, Yu. E., Kukushkin, S. A., Osipov, A. V. (2017) Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide. Physics of the Solid State, 59. 28-33 doi:10.1134/s1063783417010164
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Kukushkin, S. A., Osipov, A. V. (2013) A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles. Journal of Applied Physics, 113 (2). 24909pp. doi:10.1063/1.4773343
Kukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x
Kukushkin, S. A., Osipov, A. V. (2019) Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal. Physics of the Solid State, 61. 2338-2341 doi:10.1134/s1063783419120242
Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
 
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