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Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
JournalPhysics of the Solid State
AuthorsKukushkin, S. A.Author
Osipov, A. V.Author
Feoktistov, N. A.Author
Year2014 (August)Volume56
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783414080137Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6155960Long-form Identifiermindat:1:5:6155960:8
GUID0
Full ReferenceKukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
Plain TextKukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
In(n.d.) Physics of the Solid State Vol. 56. Pleiades Publishing Ltd

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Grudinkin, S. A., Golubev, V. G., Osipov, A. V., Feoktistov, N. A., Kukushkin, S. A. (2015) Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon. Physics of the Solid State, 57. 2543-2549 doi:10.1134/s1063783415120136
Kukushkin, S. A., Lukyanov, A. V., Osipov, A. V., Feoktistov, N. A. (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters, 40. 36-39 doi:10.1134/s1063785014010088
Kukushkin, S. A., Osipov, A. V. (2017) The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms. Technical Physics Letters, 43. 631-634 doi:10.1134/s1063785017070094
Grudinkin, S. A., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2017) IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Physics of the Solid State, 59. 2430-2435 doi:10.1134/s1063783417120186
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Kukushkin, S. A., Osipov, A. V. (2022) Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review) Russian Journal of General Chemistry, 92 (4) 584-610 doi:10.1134/s1070363222040028
Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P. (2018) Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer. Physics of the Solid State, 60. 504-509 doi:10.1134/s1063783418030022
Kompan, M. E., Aksyanov, I. G., Kul’kova, I. V., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2009) Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy. Physics of the Solid State, 51. 2469-2473 doi:10.1134/s1063783409120075
Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2019) Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution. Physics of the Solid State, 61. 456-463 doi:10.1134/s1063783419030193
Kukushkin, S. A., Osipov, A. V. (2019) Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal. Physics of the Solid State, 61. 2338-2341 doi:10.1134/s1063783419120242
Kukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130
 
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