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Kukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x

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Reference TypeJournal (article/letter/editorial)
TitleTechniques for Polytypic Transformations in Silicon Carbide
JournalPhysics of the Solid State
AuthorsKukushkin, S. A.Author
Osipov, A. V.Author
Year2019 (August)Volume61
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s106378341908016xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID6157963Long-form Identifiermindat:1:5:6157963:9
GUID0
Full ReferenceKukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x
Plain TextKukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x
In(n.d.) Physics of the Solid State Vol. 61. Pleiades Publishing Ltd

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Kukushkin, S. A., Osipov, A. V. (2019) Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal. Physics of the Solid State, 61. 2338-2341 doi:10.1134/s1063783419120242
Kukushkin, S. A., Osipov, A. V. (2019) Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide. Physics of the Solid State, 61. 288-291 doi:10.1134/s1063783419030181
Kukushkin, S. A., Osipov, A. V. (2008) New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment. Physics of the Solid State, 50. 1238-1245 doi:10.1134/s1063783408070081
Kukushkin, S. A., Osipov, A. V. (2016) Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon. Physics of the Solid State, 58. 747-751 doi:10.1134/s1063783416040120
Kukushkin, S. A., Osipov, A. V. (2017) A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon. Physics of the Solid State, 59. 1238-1241 doi:10.1134/s1063783417060130
Egorov, V. K., Egorov, E. V., Kukushkin, S. A., Osipov, A. V. (2017) Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide. Physics of the Solid State, 59. 773-779 doi:10.1134/s1063783417040072
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P. (2018) Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer. Physics of the Solid State, 60. 504-509 doi:10.1134/s1063783418030022
Grudinkin, S. A., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2017) IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. Physics of the Solid State, 59. 2430-2435 doi:10.1134/s1063783417120186
Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
Kukushkin, S. A., Osipov, A. V. (2018) Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution. Physics of the Solid State, 60. 1891-1896 doi:10.1134/s1063783418090184
 
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