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Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State, 58. 629-632 doi:10.1134/s1063783416030033

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of cadmium sulfide films on silicon
JournalPhysics of the Solid State
AuthorsAntipov, V. V.Author
Kukushkin, S. A.Author
Osipov, A. V.Author
Year2016 (March)Volume58
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783416030033Search in ResearchGate
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Mindat Ref. ID6156597Long-form Identifiermindat:1:5:6156597:3
GUID0
Full ReferenceAntipov, V. V., Kukushkin, S. A., Osipov, A. V. (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State, 58. 629-632 doi:10.1134/s1063783416030033
Plain TextAntipov, V. V., Kukushkin, S. A., Osipov, A. V. (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State, 58. 629-632 doi:10.1134/s1063783416030033
In(n.d.) Physics of the Solid State Vol. 58. Pleiades Publishing Ltd

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Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P. (2018) Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer. Physics of the Solid State, 60. 504-509 doi:10.1134/s1063783418030022
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2019) Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters, 45. 1075-1077 doi:10.1134/s1063785019110026
Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201
Kukushkin, S. A., Osipov, A. V., Romanychev, A. I. (2016) Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the Solid State, 58. 1448-1452 doi:10.1134/s1063783416070246
Kukushkin, S. A., Osipov, A. V. (2016) Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon. Physics of the Solid State, 58. 747-751 doi:10.1134/s1063783416040120
Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State, 56. 1507-1535 doi:10.1134/s1063783414080137
Egorov, V. K., Egorov, E. V., Kukushkin, S. A., Osipov, A. V. (2017) Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide. Physics of the Solid State, 59. 773-779 doi:10.1134/s1063783417040072
Kukushkin, S. A., Lukyanov, A. V., Osipov, A. V., Feoktistov, N. A. (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters, 40. 36-39 doi:10.1134/s1063785014010088
Gordon, P. V., Kukushkin, S. A., Osipov, A. V. (2002) Perturbation methods in the kinetics of nanocluster growth. Physics of the Solid State, 44. 2175-2180 doi:10.1134/1.1521476
Kukushkin, S. A., Osipov, A. V. (2019) Techniques for Polytypic Transformations in Silicon Carbide. Physics of the Solid State, 61. 1389-1393 doi:10.1134/s106378341908016x
 
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