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Kukushkin, S. A., Osipov, A. V., Romanychev, A. I. (2016) Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the Solid State, 58. 1448-1452 doi:10.1134/s1063783416070246

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates
JournalPhysics of the Solid State
AuthorsKukushkin, S. A.Author
Osipov, A. V.Author
Romanychev, A. I.Author
Year2016 (July)Volume58
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783416070246Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6156741Long-form Identifiermindat:1:5:6156741:2
GUID0
Full ReferenceKukushkin, S. A., Osipov, A. V., Romanychev, A. I. (2016) Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the Solid State, 58. 1448-1452 doi:10.1134/s1063783416070246
Plain TextKukushkin, S. A., Osipov, A. V., Romanychev, A. I. (2016) Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the Solid State, 58. 1448-1452 doi:10.1134/s1063783416070246
In(n.d.) Physics of the Solid State Vol. 58. Pleiades Publishing Ltd

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Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2019) Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters, 45. 1075-1077 doi:10.1134/s1063785019110026
Kukushkin, S. A., Osipov, A. V., Romanychev, A. I., Kasatkin, I. A., Loshachenko, A. S. (2020) Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. Technical Physics Letters, 46 (11) 1049-1052 doi:10.1134/s1063785020110085
Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201
Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V. (2019) Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution. Physics of the Solid State, 61. 2310-2312 doi:10.1134/s106378341912014x
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2016) Epitaxial growth of cadmium sulfide films on silicon. Physics of the Solid State, 58. 629-632 doi:10.1134/s1063783416030033
Eremeev, Yu. A., Vorobev, M. G., Grashchenko, A. S., Semencha, A. V., Osipov, A. V., Kukushkin, S. A. (2022) Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates. Physics of the Solid State, 64 (9) 511-515 doi:10.1134/s1063783422110038
Kukushkin, S. A., Nussupov, K. Kh., Osipov, A. V., Beisenkhanov, N. B., Bakranova, D. I. (2017) X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method. Physics of the Solid State, 59. 1014-1026 doi:10.1134/s1063783417050195
Bessolov, V. N., Grashchenko, A. S., Konenkova, E. V., Myasoedov, A. V., Osipov, A. V., Red’kov, A. V., Rodin, S. N., Rubets, V. P., Kukushkin, S. A. (2015) Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN. Physics of the Solid State, 57. 1966-1971 doi:10.1134/s1063783415100042
Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N. (2017) Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates. Physics of the Solid State, 59. 674-681 doi:10.1134/s1063783417040114
Grashchenko, A. S., Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Soshnikov, I. P. (2018) Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates. Physics of the Solid State, 60. 852-857 doi:10.1134/s1063783418050104
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
 
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