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(1999, January) physica status solidi (a) Vol. 171 (1) Wiley

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Reference TypeJournal (issue)
Journalphysica status solidi (a)
Year1999 (January)Volume171
Issue1   >
PublisherWiley
Mindat Ref. ID5083976Long-form Identifiermindat:1:5:5083976:6
GUID0
Full Reference(1999, January) physica status solidi (a) Vol. 171 (1) Wiley
Plain Text(1999, January) physica status solidi (a) Vol. 171 (1) Wiley
In(1999) physica status solidi (a) Vol. 171. Wiley

Contains

(1999) physica status solidi (a), 171 (1). Wiley. doi:10.1002/(sici)1521-396x(199901)171:1<>1.0.co;2-u
Zhang, Z. G., Li, C., Ge, S. H. (1999) Investigation on the Magnetic Interaction between Neighboring Grains in Insulating Granular Film of Co54Al19O27. physica status solidi (a), 171 (1). doi:10.1002/(sici)1521-396x(199901)171:13.0.co;2-2
Barandiarán, J. M., Kurlyandskaya, G. V., Vázquez, M., Gutiérrez, J., Garcia, D., Muñoz, J. L. (1999) A Simple Model of the Magnetoresistance Contribution to the Magnetoimpedance Effect in Thin Films. physica status solidi (a), 171 (1). doi:10.1002/(sici)1521-396x(199901)171:13.0.co;2-v
Alexander, H., Kolar, H. R., Spence, J. C. H. (1999) Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique. physica status solidi (a), 171 (1). 5-16 doi:10.1002/(sici)1521-396x(199901)171:1<5::aid-pssa5>3.0.co;2-l
Iunin, Yu. L., Nikitenko, V. I. (1999) Dislocation Kink Dynamics in Crystals with Deep Peierls Potential Relief. physica status solidi (a), 171 (1). 17-26 doi:10.1002/(sici)1521-396x(199901)171:1<17::aid-pssa17>3.0.co;2-2
Yamashita, Y., Jyobe, F., Kamiura, Y., Maeda, K. (1999) Hydrogen Enhanced Dislocation Glides in Silicon. physica status solidi (a), 171 (1). 27-34 doi:10.1002/(sici)1521-396x(199901)171:1<27::aid-pssa27>3.0.co;2-0
Yonenaga, I., Werner, M., Bartsch, M., Messerschmidt, U., Werner, E. R. (1999) Recombination-Enhanced Dislocation Motion in SiGe and Ge. physica status solidi (a), 171 (1). 35-40 doi:10.1002/(sici)1521-396x(199901)171:1<35::aid-pssa35>3.0.co;2-a
Yonenaga, I. (1999) Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals. physica status solidi (a), 171 (1). 41-46 doi:10.1002/(sici)1521-396x(199901)171:1<41::aid-pssa41>3.0.co;2-w
Suzuki, T., Yasutomi, T., Tokuoka, T., Yonenaga, I. (1999) Plasticity of III—V Compounds at Low Temperatures. physica status solidi (a), 171 (1). 47-52 doi:10.1002/(sici)1521-396x(199901)171:1<47::aid-pssa47>3.0.co;2-x
Yonenaga, I., Lim, S.-H., Shindo, D., Brown, P. D., Humphreys, C. J. (1999) Structure and Climb of Faulted Dipoles in GaAs. physica status solidi (a), 171 (1). 53-57 doi:10.1002/(sici)1521-396x(199901)171:1<53::aid-pssa53>3.0.co;2-i
Branchu, S., Pailloux, F., Garem, H., Rabier, J., Demenet, J. L. (1999) Partial Dislocation Source in InSb: A New Mechanism. physica status solidi (a), 171 (1). 59-65 doi:10.1002/(sici)1521-396x(199901)171:1<59::aid-pssa59>3.0.co;2-j
Scandian, C., Azzouzi, H., Maloufi, N., Michot, G., George, A. (1999) Dislocation Nucleation and Multiplication at Crack Tips in Silicon. physica status solidi (a), 171 (1). 67-82 doi:10.1002/(sici)1521-396x(199901)171:1<67::aid-pssa67>3.0.co;2-t
Levade, C., Vanderschaeve, G. (1999) Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry. physica status solidi (a), 171 (1). 83-88 doi:10.1002/(sici)1521-396x(199901)171:1<83::aid-pssa83>3.0.co;2-c
Schreiber, J., Höring, L., Uniewski, H., Hildebrandt, S., Leipner, H. S. (1999) Recognition and Distribution of A(g) and B(g) Dislocations in Indentation Deformation Zones on {111} and {110} Surfaces of CdTe. physica status solidi (a), 171 (1). 89-97 doi:10.1002/(sici)1521-396x(199901)171:1<89::aid-pssa89>3.0.co;2-d
Takeuchi, S., Suzuki, K. (1999) Stacking Fault Energies of Tetrahedrally Coordinated Crystals. physica status solidi (a), 171 (1). 99-103 doi:10.1002/(sici)1521-396x(199901)171:1<99::aid-pssa99>3.0.co;2-b
Lefeld-Sosnowska, M. (1999) Dislocations Generated in Si Annealed under Normal or High Pressure. physica status solidi (a), 171 (1). 105-110 doi:10.1002/(sici)1521-396x(199901)171:1<105::aid-pssa105>3.0.co;2-h
Sumino, K. (1999) Impurity Reaction with Dislocations in Semiconductors. physica status solidi (a), 171 (1). 111-122 doi:10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t
Pizzini, S. (1999) Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon. physica status solidi (a), 171 (1). 123-132 doi:10.1002/(sici)1521-396x(199901)171:1<123::aid-pssa123>3.0.co;2-h
Hull, R., Stach, E. A., Tromp, R., Ross, F., Reuter, M. (1999) Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects. physica status solidi (a), 171 (1). 133-146 doi:10.1002/(sici)1521-396x(199901)171:1<133::aid-pssa133>3.0.co;2-d
Fedina, L., Gutakovskii, A., Aseev, A., Van Landuyt, J., Vanhellemont, J. (1999) Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM. physica status solidi (a), 171 (1). 147-158 doi:10.1002/(sici)1521-396x(199901)171:1<147::aid-pssa147>3.0.co;2-u
Belov, A. Yu., Scheerschmidt, K., Gösele, U. (1999) Extended Point Defect Structures at Intersections of Screw Dislocations in Si: A Molecular Dynamics Study. physica status solidi (a), 171 (1). 159-166 doi:10.1002/(sici)1521-396x(199901)171:1<159::aid-pssa159>3.0.co;2-i
Jones, R., Elsner, J., Haugk, M., Gutierrez, R., Frauenheim, Th., Heggie, M. I., Öberg, S., Briddon, P. R. (1999) Interaction of Oxygen with Threading Dislocations in GaN. physica status solidi (a), 171 (1). 167-173 doi:10.1002/(sici)1521-396x(199901)171:1<167::aid-pssa167>3.0.co;2-m
Möller, H. J., Long, L., Werner, M., Yang, D. (1999) Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon. physica status solidi (a), 171 (1). 175-189 doi:10.1002/(sici)1521-396x(199901)171:1<175::aid-pssa175>3.0.co;2-q
Misiuk, A. (1999) Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon. physica status solidi (a), 171 (1). 191-196 doi:10.1002/(sici)1521-396x(199901)171:1<191::aid-pssa191>3.0.co;2-y
Dzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure of Oxygen and Silicon Interstitials in Silicon. physica status solidi (a), 171 (1). 197-201 doi:10.1002/(sici)1521-396x(199901)171:1<197::aid-pssa197>3.0.co;2-a
Yang, Deren, Que, Duanlin (1999) Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon. physica status solidi (a), 171 (1). 203-207 doi:10.1002/(sici)1521-396x(199901)171:1<203::aid-pssa203>3.0.co;2-l
Frigeri, C., Carnera, A., Gasparotto, A., Priolo, F., Fraboni, B., Camporese, A., Rosetto, G. (1999) Gettering of Fe at the End of Range Loops in Fe-Implanted InP. physica status solidi (a), 171 (1). 209-214 doi:10.1002/(sici)1521-396x(199901)171:1<209::aid-pssa209>3.0.co;2-y
Strunk, H. P., Albrecht, M., Christiansen, S., Dorsch, W., Hörmann, U., Jahnen, B., Remmel, T. (1999) Relaxation of Misfit-Induced Strain in Semiconductor Heterostructures. physica status solidi (a), 171 (1). 215-225 doi:10.1002/(sici)1521-396x(199901)171:1<215::aid-pssa215>3.0.co;2-9
Fitzgerald, E. A., Currie, M. T., Samavedam, S. B., Langdo, T. A., Taraschi, G., Yang, V., Leitz, C. W., Bulsara, M. T. (1999) Dislocations in Relaxed SiGe/Si Heterostructures. physica status solidi (a), 171 (1). 227-238 doi:10.1002/(sici)1521-396x(199901)171:1<227::aid-pssa227>3.0.co;2-y
Vdovin, V. I. (1999) Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication. physica status solidi (a), 171 (1). 239-250 doi:10.1002/(sici)1521-396x(199901)171:1<239::aid-pssa239>3.0.co;2-m
Pichaud, B., Putero, M., Burle, N. (1999) Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems. physica status solidi (a), 171 (1). 251-265 doi:10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9
Dornheim, M., Teichler, H. (1999) Atomistic Modeling of Misfit Dislocations for Ge/(001)Si and Ge/(111)Si. physica status solidi (a), 171 (1). 267-274 doi:10.1002/(sici)1521-396x(199901)171:1<267::aid-pssa267>3.0.co;2-i
Katcki, J., Ratajczak, J., Adamczewska, J., Phillipp, F., Jin-Phillipp, N. Y., Regiński, K., Bugajski, M. (1999) Formation of Dislocations in InGaAs/GaAs Heterostructures. physica status solidi (a), 171 (1). 275-282 doi:10.1002/(sici)1521-396x(199901)171:1<275::aid-pssa275>3.0.co;2-m
Nemcsics, Á., Riesz, F., Dobos, L. (1999) Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems. physica status solidi (a), 171 (1). 283-288 doi:10.1002/(sici)1521-396x(199901)171:1<283::aid-pssa283>3.0.co;2-q
Domagała, J., Bąk-Misiuk, J., Adamczewska, J., Zytkiewicz, Z. R., Dynowska, E., Trela, J., Dobosz, D., Janik, E., Leszczyński, M. (1999) Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers. physica status solidi (a), 171 (1). 289-294 doi:10.1002/(sici)1521-396x(199901)171:1<289::aid-pssa289>3.0.co;2-2
Wosiński, T., Figielski, T., Ma¸kosa, A. (1999) Quantum Interference at Misfit Dislocations in Semiconductor Heterostructures. physica status solidi (a), 171 (1). 295-299 doi:10.1002/(sici)1521-396x(199901)171:1<295::aid-pssa295>3.0.co;2-e
Seibt, M., Hedemann, H., Istratov, A. A., Riedel, F., Sattler, A., Schröter, W. (1999) Structural and Electrical Properties of Metal Silicide Precipitates in Silicon. physica status solidi (a), 171 (1). 301-310 doi:10.1002/(sici)1521-396x(199901)171:1<301::aid-pssa301>3.0.co;2-p
Horváth, Zs. J., Gombia, E., Pal, D., Kovacsics, Cs., Capannese, G., Pintér, I., Ádám, M., Mosca, R., Van Tuyen, Vo., Dózsa, L. (1999) Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs and Si. physica status solidi (a), 171 (1). 311-317 doi:10.1002/(sici)1521-396x(199901)171:1<311::aid-pssa311>3.0.co;2-l
Demenet, J. L., Tillay, V., Barbot, J. F. (1999) Electrical Study of Dislocated Si- and C-Faces of n-Type 6H-SiC. physica status solidi (a), 171 (1). 319-324 doi:10.1002/(sici)1521-396x(199901)171:1<319::aid-pssa319>3.0.co;2-q
Salviati, G., Albrecht, M., Zanotti-Fregonara, C., Armani, N., Mayer, M., Shreter, Y., Guzzi, M., Melnik, Yu. V., Vassilevski, K., Dmitriev, V. A., Strunk, H. P. (1999) Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN. physica status solidi (a), 171 (1). 325-339 doi:10.1002/(sici)1521-396x(199901)171:1<325::aid-pssa325>3.0.co;2-1
Feklisova, O. V., Mariani-Regula, G., Pichaud, B., Yakimov, E. B. (1999) Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon. physica status solidi (a), 171 (1). 341-346 doi:10.1002/(sici)1521-396x(199901)171:1<341::aid-pssa341>3.0.co;2-9
Cavallini, A., Fraboni, B., Binetti, S., Pizzini, S., Lazzarini, L., Salviati, G. (1999) On the Influence of Dislocation on the Luminescence of Si:Er. physica status solidi (a), 171 (1). 347-351 doi:10.1002/(sici)1521-396x(199901)171:1<347::aid-pssa347>3.0.co;2-m
Fedotov, A., Drozdov, N., Katz, E., Ilyashuk, Yu., Mazanik, A., Ulyashin, A. (1999) Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment. physica status solidi (a), 171 (1). 353-363 doi:10.1002/(sici)1521-396x(199901)171:1<353::aid-pssa353>3.0.co;2-y
Rotaru, C., Nastase, S., Tomozeiu, N. (1999) Amorphous Phase Influence on the Optical Bandgap of Polysilicon. physica status solidi (a), 171 (1). 365-370 doi:10.1002/(sici)1521-396x(199901)171:1<365::aid-pssa365>3.0.co;2-m
Mil'shtein, S. (1999) Dislocations in Microelectronics. physica status solidi (a), 171 (1). 371-376 doi:10.1002/(sici)1521-396x(199901)171:1<371::aid-pssa371>3.0.co;2-y
Leipner, H. S., Hübner, C. G., Staab, T. E. M., Haugk, M., Krause-Rehberg, R. (1999) Positron Annihilation at Dislocations and Related Point Defects in Semiconductors. physica status solidi (a), 171 (1). 377-382 doi:10.1002/(sici)1521-396x(199901)171:1<377::aid-pssa377>3.0.co;2-a
Eremenko, V., Abrosimov, N., Fedorov, A. (1999) The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe. physica status solidi (a), 171 (1). 383-388 doi:10.1002/(sici)1521-396x(199901)171:1<383::aid-pssa383>3.0.co;2-m
Klinger, D., Lefeld-Sosnowska, M., Żymierska, D., Auleytner, J., Kozankiewicz, B., Regiński, K. (1999) Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals. physica status solidi (a), 171 (1). 389-394 doi:10.1002/(sici)1521-396x(199901)171:1<389::aid-pssa389>3.0.co;2-z
Sass, J., Mazur, K., Gladki, A., Turos, A., Eichhorn, F. (1999) Reciprocal Space Mapping and Reflectivity Investigations of Epi-Ready InP Substrate. physica status solidi (a), 171 (1). 395-401 doi:10.1002/(sici)1521-396x(199901)171:1<395::aid-pssa395>3.0.co;2-a
Riesz, F. (1999) Makyoh Topography for the Study of Large-Area Extended Defects in Semiconductors. physica status solidi (a), 171 (1). 403-409 doi:10.1002/(sici)1521-396x(199901)171:1<403::aid-pssa403>3.0.co;2-d

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