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Rotaru, C., Nastase, S., Tomozeiu, N. (1999) Amorphous Phase Influence on the Optical Bandgap of Polysilicon. physica status solidi (a), 171 (1). 365-370 doi:10.1002/(sici)1521-396x(199901)171:1<365::aid-pssa365>3.0.co;2-m

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Reference TypeJournal (article/letter/editorial)
TitleAmorphous Phase Influence on the Optical Bandgap of Polysilicon
Journalphysica status solidi (a)
AuthorsRotaru, C.Author
Nastase, S.Author
Tomozeiu, N.Author
Year1999 (January)Volume171
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199901)171:1<365::aid-pssa365>3.0.co;2-mSearch in ResearchGate
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Mindat Ref. ID5084039Long-form Identifiermindat:1:5:5084039:1
GUID0
Full ReferenceRotaru, C., Nastase, S., Tomozeiu, N. (1999) Amorphous Phase Influence on the Optical Bandgap of Polysilicon. physica status solidi (a), 171 (1). 365-370 doi:10.1002/(sici)1521-396x(199901)171:1<365::aid-pssa365>3.0.co;2-m
Plain TextRotaru, C., Nastase, S., Tomozeiu, N. (1999) Amorphous Phase Influence on the Optical Bandgap of Polysilicon. physica status solidi (a), 171 (1). 365-370 doi:10.1002/(sici)1521-396x(199901)171:13.0.co;2-m
In(1999, January) physica status solidi (a) Vol. 171 (1) Wiley

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Mil'shtein, S. (1999) Dislocations in Microelectronics. physica status solidi (a), 171 (1). 371-376 doi:10.1002/(sici)1521-396x(199901)171:1<371::aid-pssa371>3.0.co;2-y
(1999) physica status solidi (a), 171 (1). Wiley. doi:10.1002/(sici)1521-396x(199901)171:1<>1.0.co;2-u
Yang, Deren, Que, Duanlin (1999) Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon. physica status solidi (a), 171 (1). 203-207 doi:10.1002/(sici)1521-396x(199901)171:1<203::aid-pssa203>3.0.co;2-l
Sumino, K. (1999) Impurity Reaction with Dislocations in Semiconductors. physica status solidi (a), 171 (1). 111-122 doi:10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t
Cavallini, A., Fraboni, B., Binetti, S., Pizzini, S., Lazzarini, L., Salviati, G. (1999) On the Influence of Dislocation on the Luminescence of Si:Er. physica status solidi (a), 171 (1). 347-351 doi:10.1002/(sici)1521-396x(199901)171:1<347::aid-pssa347>3.0.co;2-m
Takeuchi, S., Suzuki, K. (1999) Stacking Fault Energies of Tetrahedrally Coordinated Crystals. physica status solidi (a), 171 (1). 99-103 doi:10.1002/(sici)1521-396x(199901)171:1<99::aid-pssa99>3.0.co;2-b
Yonenaga, I. (1999) Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals. physica status solidi (a), 171 (1). 41-46 doi:10.1002/(sici)1521-396x(199901)171:1<41::aid-pssa41>3.0.co;2-w
Vdovin, V. I. (1999) Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication. physica status solidi (a), 171 (1). 239-250 doi:10.1002/(sici)1521-396x(199901)171:1<239::aid-pssa239>3.0.co;2-m
Lefeld-Sosnowska, M. (1999) Dislocations Generated in Si Annealed under Normal or High Pressure. physica status solidi (a), 171 (1). 105-110 doi:10.1002/(sici)1521-396x(199901)171:1<105::aid-pssa105>3.0.co;2-h
Pichaud, B., Putero, M., Burle, N. (1999) Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems. physica status solidi (a), 171 (1). 251-265 doi:10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9
Misiuk, A. (1999) Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon. physica status solidi (a), 171 (1). 191-196 doi:10.1002/(sici)1521-396x(199901)171:1<191::aid-pssa191>3.0.co;2-y
 
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