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Dzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure of Oxygen and Silicon Interstitials in Silicon. physica status solidi (a), 171 (1). 197-201 doi:10.1002/(sici)1521-396x(199901)171:1<197::aid-pssa197>3.0.co;2-a

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Reference TypeJournal (article/letter/editorial)
TitleStructure of Oxygen and Silicon Interstitials in Silicon
Journalphysica status solidi (a)
AuthorsDzelme, J.Author
Ertsinsh, I.Author
Zapol, B.Author
Misiuk, A.Author
Year1999 (January)Volume171
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199901)171:1<197::aid-pssa197>3.0.co;2-aSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID5083997Long-form Identifiermindat:1:5:5083997:9
GUID0
Full ReferenceDzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure of Oxygen and Silicon Interstitials in Silicon. physica status solidi (a), 171 (1). 197-201 doi:10.1002/(sici)1521-396x(199901)171:1<197::aid-pssa197>3.0.co;2-a
Plain TextDzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure of Oxygen and Silicon Interstitials in Silicon. physica status solidi (a), 171 (1). 197-201 doi:10.1002/(sici)1521-396x(199901)171:13.0.co;2-a
In(1999, January) physica status solidi (a) Vol. 171 (1) Wiley

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Misiuk, A. (1999) Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon. physica status solidi (a), 171 (1). 191-196 doi:10.1002/(sici)1521-396x(199901)171:1<191::aid-pssa191>3.0.co;2-y
Yang, Deren, Que, Duanlin (1999) Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon. physica status solidi (a), 171 (1). 203-207 doi:10.1002/(sici)1521-396x(199901)171:1<203::aid-pssa203>3.0.co;2-l
Möller, H. J., Long, L., Werner, M., Yang, D. (1999) Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon. physica status solidi (a), 171 (1). 175-189 doi:10.1002/(sici)1521-396x(199901)171:1<175::aid-pssa175>3.0.co;2-q
Dzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure and diffusion of oxygen and silicon interstitials in silicon. Journal of Alloys and Compounds, 286. 254-257 doi:10.1016/s0925-8388(98)01016-0
Pizzini, S. (1999) Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon. physica status solidi (a), 171 (1). 123-132 doi:10.1002/(sici)1521-396x(199901)171:1<123::aid-pssa123>3.0.co;2-h
Mil'shtein, S. (1999) Dislocations in Microelectronics. physica status solidi (a), 171 (1). 371-376 doi:10.1002/(sici)1521-396x(199901)171:1<371::aid-pssa371>3.0.co;2-y
Feklisova, O. V., Mariani-Regula, G., Pichaud, B., Yakimov, E. B. (1999) Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon. physica status solidi (a), 171 (1). 341-346 doi:10.1002/(sici)1521-396x(199901)171:1<341::aid-pssa341>3.0.co;2-9
Yamashita, Y., Jyobe, F., Kamiura, Y., Maeda, K. (1999) Hydrogen Enhanced Dislocation Glides in Silicon. physica status solidi (a), 171 (1). 27-34 doi:10.1002/(sici)1521-396x(199901)171:1<27::aid-pssa27>3.0.co;2-0
(1999) physica status solidi (a), 171 (1). Wiley. doi:10.1002/(sici)1521-396x(199901)171:1<>1.0.co;2-u
Sumino, K. (1999) Impurity Reaction with Dislocations in Semiconductors. physica status solidi (a), 171 (1). 111-122 doi:10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t
Yonenaga, I. (1999) Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals. physica status solidi (a), 171 (1). 41-46 doi:10.1002/(sici)1521-396x(199901)171:1<41::aid-pssa41>3.0.co;2-w
 
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