登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Scandian, C., Azzouzi, H., Maloufi, N., Michot, G., George, A. (1999) Dislocation Nucleation and Multiplication at Crack Tips in Silicon. physica status solidi (a), 171 (1). 67-82 doi:10.1002/(sici)1521-396x(199901)171:1<67::aid-pssa67>3.0.co;2-t

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDislocation Nucleation and Multiplication at Crack Tips in Silicon
Journalphysica status solidi (a)
AuthorsScandian, C.Author
Azzouzi, H.Author
Maloufi, N.Author
Michot, G.Author
George, A.Author
Year1999 (January)Volume171
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199901)171:1<67::aid-pssa67>3.0.co;2-tSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID5084064Long-form Identifiermindat:1:5:5084064:7
GUID0
Full ReferenceScandian, C., Azzouzi, H., Maloufi, N., Michot, G., George, A. (1999) Dislocation Nucleation and Multiplication at Crack Tips in Silicon. physica status solidi (a), 171 (1). 67-82 doi:10.1002/(sici)1521-396x(199901)171:1<67::aid-pssa67>3.0.co;2-t
Plain TextScandian, C., Azzouzi, H., Maloufi, N., Michot, G., George, A. (1999) Dislocation Nucleation and Multiplication at Crack Tips in Silicon. physica status solidi (a), 171 (1). 67-82 doi:10.1002/(sici)1521-396x(199901)171:13.0.co;2-t
In(1999, January) physica status solidi (a) Vol. 171 (1) Wiley

See Also

These are possibly similar items as determined by title/reference text matching only.

Yamashita, Y., Jyobe, F., Kamiura, Y., Maeda, K. (1999) Hydrogen Enhanced Dislocation Glides in Silicon. physica status solidi (a), 171 (1). 27-34 doi:10.1002/(sici)1521-396x(199901)171:1<27::aid-pssa27>3.0.co;2-0
Pizzini, S. (1999) Chemistry and Physics of Segregation of Impurities at Extended Defects in Silicon. physica status solidi (a), 171 (1). 123-132 doi:10.1002/(sici)1521-396x(199901)171:1<123::aid-pssa123>3.0.co;2-h
Vdovin, V. I. (1999) Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication. physica status solidi (a), 171 (1). 239-250 doi:10.1002/(sici)1521-396x(199901)171:1<239::aid-pssa239>3.0.co;2-m
Mil'shtein, S. (1999) Dislocations in Microelectronics. physica status solidi (a), 171 (1). 371-376 doi:10.1002/(sici)1521-396x(199901)171:1<371::aid-pssa371>3.0.co;2-y
Yonenaga, I. (1999) Dislocation Velocities and Mechanical Strength of Bulk GeSi Crystals. physica status solidi (a), 171 (1). 41-46 doi:10.1002/(sici)1521-396x(199901)171:1<41::aid-pssa41>3.0.co;2-w
Sumino, K. (1999) Impurity Reaction with Dislocations in Semiconductors. physica status solidi (a), 171 (1). 111-122 doi:10.1002/(sici)1521-396x(199901)171:1<111::aid-pssa111>3.0.co;2-t
(1999) physica status solidi (a), 171 (1). Wiley. doi:10.1002/(sici)1521-396x(199901)171:1<>1.0.co;2-u
Wosiński, T., Figielski, T., Ma¸kosa, A. (1999) Quantum Interference at Misfit Dislocations in Semiconductor Heterostructures. physica status solidi (a), 171 (1). 295-299 doi:10.1002/(sici)1521-396x(199901)171:1<295::aid-pssa295>3.0.co;2-e
Dzelme, J., Ertsinsh, I., Zapol, B., Misiuk, A. (1999) Structure of Oxygen and Silicon Interstitials in Silicon. physica status solidi (a), 171 (1). 197-201 doi:10.1002/(sici)1521-396x(199901)171:1<197::aid-pssa197>3.0.co;2-a
Pichaud, B., Putero, M., Burle, N. (1999) Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems. physica status solidi (a), 171 (1). 251-265 doi:10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9
Yang, Deren, Que, Duanlin (1999) Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon. physica status solidi (a), 171 (1). 203-207 doi:10.1002/(sici)1521-396x(199901)171:1<203::aid-pssa203>3.0.co;2-l
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 11:22:49
Go to top of page