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Zhang, Jian, Yang, Hui, Zhang, Qi-long, Dong, Shurong, Luo, J. K. (2013) Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition. Applied Physics Letters, 102 (1). 12113pp. doi:10.1063/1.4774400

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Reference TypeJournal (article/letter/editorial)
TitleBipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
JournalApplied Physics Letters
AuthorsZhang, JianAuthor
Yang, HuiAuthor
Zhang, Qi-longAuthor
Dong, ShurongAuthor
Luo, J. K.Author
Year2013 (January 7)Volume102
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.4774400Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8610576Long-form Identifiermindat:1:5:8610576:5
GUID0
Full ReferenceZhang, Jian, Yang, Hui, Zhang, Qi-long, Dong, Shurong, Luo, J. K. (2013) Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition. Applied Physics Letters, 102 (1). 12113pp. doi:10.1063/1.4774400
Plain TextZhang, Jian, Yang, Hui, Zhang, Qi-long, Dong, Shurong, Luo, J. K. (2013) Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition. Applied Physics Letters, 102 (1). 12113pp. doi:10.1063/1.4774400
In(2013, January) Applied Physics Letters Vol. 102 (1) AIP Publishing

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