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Zhang, Jian, Yang, Hui, Zhang, Qilong, Jiang, Hao, Luo, Jikui, Zhou, Juehui, Dong, Shurong (2014) Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition. Applied Physics A, 116. 663-669 doi:10.1007/s00339-014-8324-4

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Reference TypeJournal (article/letter/editorial)
TitleResistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition
JournalApplied Physics A
AuthorsZhang, JianAuthor
Yang, HuiAuthor
Zhang, QilongAuthor
Jiang, HaoAuthor
Luo, JikuiAuthor
Zhou, JuehuiAuthor
Dong, ShurongAuthor
Year2014 (August)Volume116
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-014-8324-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6017108Long-form Identifiermindat:1:5:6017108:7
GUID0
Full ReferenceZhang, Jian, Yang, Hui, Zhang, Qilong, Jiang, Hao, Luo, Jikui, Zhou, Juehui, Dong, Shurong (2014) Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition. Applied Physics A, 116. 663-669 doi:10.1007/s00339-014-8324-4
Plain TextZhang, Jian, Yang, Hui, Zhang, Qilong, Jiang, Hao, Luo, Jikui, Zhou, Juehui, Dong, Shurong (2014) Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition. Applied Physics A, 116. 663-669 doi:10.1007/s00339-014-8324-4
In(2014) Applied Physics A Vol. 116. Springer Science and Business Media LLC

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