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Zhou, Hai, Zhu, Yongdan, Wang, Hao, Fang, Guojia (2014) Investigation of threshold switching mechanism based on Mn-doped ZnO/GaN heterojunction by photogenerated carrier injection. Applied Physics A, 116. 1415-1420 doi:10.1007/s00339-014-8249-y

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of threshold switching mechanism based on Mn-doped ZnO/GaN heterojunction by photogenerated carrier injection
JournalApplied Physics A
AuthorsZhou, HaiAuthor
Zhu, YongdanAuthor
Wang, HaoAuthor
Fang, GuojiaAuthor
Year2014 (September)Volume116
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-014-8249-ySearch in ResearchGate
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Mindat Ref. ID6017172Long-form Identifiermindat:1:5:6017172:2
GUID0
Full ReferenceZhou, Hai, Zhu, Yongdan, Wang, Hao, Fang, Guojia (2014) Investigation of threshold switching mechanism based on Mn-doped ZnO/GaN heterojunction by photogenerated carrier injection. Applied Physics A, 116. 1415-1420 doi:10.1007/s00339-014-8249-y
Plain TextZhou, Hai, Zhu, Yongdan, Wang, Hao, Fang, Guojia (2014) Investigation of threshold switching mechanism based on Mn-doped ZnO/GaN heterojunction by photogenerated carrier injection. Applied Physics A, 116. 1415-1420 doi:10.1007/s00339-014-8249-y
In(2014) Applied Physics A Vol. 116. Springer Science and Business Media LLC

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