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Kim, Jinwoo, Kim, Seokhoon, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B., Bae, Choelhwyi (2005) Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Applied Physics Letters, 87 (5). 53108pp. doi:10.1063/1.2005370

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of HfO2 thin films grown by plasma atomic layer deposition
JournalApplied Physics Letters
AuthorsKim, JinwooAuthor
Kim, SeokhoonAuthor
Jeon, HyeongtagAuthor
Cho, M.-H.Author
Chung, K.-B.Author
Bae, ChoelhwyiAuthor
Year2005 (August)Volume87
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2005370Search in ResearchGate
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Mindat Ref. ID8545929Long-form Identifiermindat:1:5:8545929:8
GUID0
Full ReferenceKim, Jinwoo, Kim, Seokhoon, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B., Bae, Choelhwyi (2005) Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Applied Physics Letters, 87 (5). 53108pp. doi:10.1063/1.2005370
Plain TextKim, Jinwoo, Kim, Seokhoon, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B., Bae, Choelhwyi (2005) Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Applied Physics Letters, 87 (5). 53108pp. doi:10.1063/1.2005370
In(2005, August) Applied Physics Letters Vol. 87 (5) AIP Publishing

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Kim, Inhoe, Kuk, Seoungwoo, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B. (2007) Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (22). 222101pp. doi:10.1063/1.2743749
Kim, Jinwoo, Kim, Seokhoon, Kang, Hyunseok, Choi, Jihoon, Jeon, Hyeongtag, Cho, Mannho, Chung, Kwunbum, Back, Sungkwun, Yoo, Kyungdong, Bae, Choelhwyi (2005) Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods. Journal of Applied Physics, 98 (9). 94504pp. doi:10.1063/1.2121929
Park, Myungjin, Koo, Jaehyoung, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Krug, Cristiano (2005) Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition. Applied Physics Letters, 86 (25). 252110pp. doi:10.1063/1.1944206
Won, Youngdo, Park, Sangwook, Koo, Jaehyoung, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag (2005) Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method. Applied Physics Letters, 87 (26). 262901pp. doi:10.1063/1.2150250
Kim, Seokhoon, Woo, Sanghyun, Hong, Hyungseok, Kim, Hyungchul, Jeon, Hyeongtag, Bae, Choelhwyi (2007) Effect of Buffer Layer for HfO[sub 2] Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition. Journal of the Electrochemical Society, 154. doi:10.1149/1.2401033
Woo, Sanghyun, Hong, Hyungseok, Kim, Seokhoon, Kim, Hyungchul, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Okada, Takayuki, Sawada, Kazuaki, Ishida, Makoto (2008) Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique. Japanese Journal of Applied Physics, 47 (8) 6196-6199 doi:10.1143/jjap.47.6196
Kim, Seokhoon, Woo, Sanghyun, Kim, Hyungchul, Kim, Inhoe, Lee, Keunwoo, Jeong, Wooho, Park, Taeyong, Jeon, Hyeongtag (2008) Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation. Journal of the Korean Physical Society, 52 (4). 1103-1108 doi:10.3938/jkps.52.1103
Hong, Hyungseok, Kim, Seokhoon, Woo, Sanghyun, Kim, Hyungchul, Kim, Honggyu, Jeong, Wooho, Jeon, Sunyeol, Bang, Seokhwan, Lee, Seungjun, Jeon, Hyeongtag (2008) Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer. Journal of the Korean Physical Society, 52 (4). 1114-1119 doi:10.3938/jkps.52.1114
Chung, K. B., Lucovsky, G., Lee, W. J., Cho, M.-H., Jeon, Hyeongtag (2009) Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers. Applied Physics Letters, 94 (4). 42907pp. doi:10.1063/1.3077014
Kang, Y. S., Kim, C. Y., Cho, M. -H., Chung, K. B., An, C. -H., Kim, H., Lee, H. J., Kim, C. S., Lee, T. G. (2010) Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition. Applied Physics Letters, 97 (17). 172108pp. doi:10.1063/1.3506695
Kim, Ju Youn, Kim, Yangdo, Jeon, Hyeongtag (2003) Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l414
 
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