Kim, Jinwoo, Kim, Seokhoon, Kang, Hyunseok, Choi, Jihoon, Jeon, Hyeongtag, Cho, Mannho, Chung, Kwunbum, Back, Sungkwun, Yoo, Kyungdong, Bae, Choelhwyi (2005) Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods. Journal of Applied Physics, 98 (9). 94504pp. doi:10.1063/1.2121929

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kim, Jinwoo, Kim, Seokhoon, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B., Bae, Choelhwyi (2005) Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Applied Physics Letters, 87 (5). 53108pp. doi:10.1063/1.2005370
	Kim, Seokhoon, Woo, Sanghyun, Hong, Hyungseok, Kim, Hyungchul, Jeon, Hyeongtag, Bae, Choelhwyi (2007) Effect of Buffer Layer for HfO[sub 2] Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition. Journal of the Electrochemical Society, 154. doi:10.1149/1.2401033
	Kim, Inhoe, Kuk, Seoungwoo, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, Cho, M.-H., Chung, K.-B. (2007) Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (22). 222101pp. doi:10.1063/1.2743749
	Park, Myungjin, Koo, Jaehyoung, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Krug, Cristiano (2005) Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition. Applied Physics Letters, 86 (25). 252110pp. doi:10.1063/1.1944206
	Won, Youngdo, Park, Sangwook, Koo, Jaehyoung, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag (2005) Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method. Applied Physics Letters, 87 (26). 262901pp. doi:10.1063/1.2150250
	Woo, Sanghyun, Hong, Hyungseok, Kim, Seokhoon, Kim, Hyungchul, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Okada, Takayuki, Sawada, Kazuaki, Ishida, Makoto (2008) Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique. Japanese Journal of Applied Physics, 47 (8) 6196-6199 doi:10.1143/jjap.47.6196
	Kim, Hyungchul, Kim, Seokhoon, Woo, Sanghyun, Chung, Hye Yeong, Kim, Honggyu, Park, Jongsan, Jeon, Hyeongtag (2008) Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments. Journal of the Electrochemical Society, 155. doi:10.1149/1.2990702
	Lee, Yujin, Kim, Seokhoon, Koo, Jaehyoung, Kim, Inhoe, Choi, Jihoon, Jeon, Hyeongtag, Won, Youngdo (2006) Effect of Nitrogen Incorporation in HfO[sub 2] Films Deposited by Plasma-Enhanced Atomic Layer Deposition. Journal of the Electrochemical Society, 153. doi:10.1149/1.2172556
	Hong, Hyungseok, Kim, Seokhoon, Woo, Sanghyun, Kim, Hyungchul, Kim, Honggyu, Jeong, Wooho, Jeon, Sunyeol, Bang, Seokhwan, Lee, Seungjun, Jeon, Hyeongtag (2008) Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer. Journal of the Korean Physical Society, 52 (4). 1114-1119 doi:10.3938/jkps.52.1114
	Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-Gyung (2002) Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method. Journal of Applied Physics, 92 (9). 5443-5447 doi:10.1063/1.1513196
	Cho, Haewon, Lee, Namgue, Choi, Hyeongsu, Park, Hyunwoo, Jung, Chanwon, Song, Seokhwi, Yuk, Hyunwoo, Kim, Youngjoon, Kim, Jong-Woo, Kim, Keunsik, Choi, Youngtae, Park, Suhyeon, Kwon, Yurim, Jeon, Hyeongtag (2019) Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma. Applied Sciences, 9. 3531pp. doi:10.3390/app9173531