Ioannou-Sougleridis, V., Dimitrakis, P., Vamvakas, V. Em., Normand, P., Bonafos, C., Schamm, S., Cherkashin, N., Ben Assayag, G., Perego, M., Fanciulli, M. (2007) Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, 90 (26). 263513pp. doi:10.1063/1.2752769

See Also

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	Cherkashin, N., Bonafos, C., Coffin, H., Carrada, M., Schamm, S., Ben Assayag, G., Chassaing, D., Dimitrakis, P., Normand, P., Perego, M., Fanciulli, M., Muller, T., Heinig, K. H., Claverie, A. (2005) Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), 2 (6). 1907-1911 doi:10.1002/pssc.200460523
	Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Assayag, G. Ben, Claverie, A., Respaud, M., Dimitrakis, P., Normand, P. (2006) Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers. Journal of Applied Physics, 99 (4). 44302pp. doi:10.1063/1.2171785
	Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Assayag, G. Ben, Claverie, A., Müller, T., Heinig, K. H., Perego, M., Fanciulli, M., Dimitrakis, P., Normand, P. (2004) Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation. Journal of Applied Physics, 95 (10). 5696-5702 doi:10.1063/1.1695594
	Dimitrakis, P., Normand, P., Ioannou-Sougleridis, V., Bonafos, C., Schamm-Chardon, S., BenAssayag, G., Iliopoulos, E. (2013) Quantum dots for memory applications. physica status solidi (a), 210 (8). 1490-1504 doi:10.1002/pssa.201300029
	Normand, P., Kapetanakis, E., Dimitrakis, P., Skarlatos, D., Beltsios, K., Tsoukalas, D., Bonafos, C., Ben Assayag, G., Cherkashin, N., Claverie, A., Van Den Berg, J.A., Soncini, V., Agarwal, A., Ameen, M., Perego, M., Fanciulli, M. (2004) Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 216. 228-238 doi:10.1016/j.nimb.2003.11.039
	Normand, P., Kapetanakis, E., Dimitrakis, P., Tsoukalas, D., Beltsios, K., Cherkashin, N., Bonafos, C., Benassayag, G., Coffin, H., Claverie, A., Soncini, V., Agarwal, A., Ameen, M. (2003) Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters, 83 (1). 168-170 doi:10.1063/1.1588378
	Perego, M., Ferrari, S., Fanciulli, M., Ben Assayag, G., Bonafos, C., Carrada, M., Claverie, A. (2004) Detection and characterization of silicon nanocrystals embedded in thin oxide layers. Journal of Applied Physics, 95 (1). 257-262 doi:10.1063/1.1629775
	Perego, M., Ferrari, S., Fanciulli, M., Ben Assayag, G., Bonafos, C., Carrada, M., Claverie, A. (2004) Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS. Applied Surface Science, 231. 813-816 doi:10.1016/j.apsusc.2004.03.124
	Liu, Po-Tsun, Huang, C. S., Chen, C. W. (2007) Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks. Applied Physics Letters, 90 (18). 182115pp. doi:10.1063/1.2736293
	Bonafos, C., Spiegel, Y., Normand, P., Ben-Assayag, G., Groenen, J., Carrada, M., Dimitrakis, P., Kapetanakis, E., Sahu, B. S., Slaoui, A., Torregrosa, F. (2013) Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories. Applied Physics Letters, 103 (25). 253118pp. doi:10.1063/1.4848780
	Schamm, S., Bonafos, C., Coffin, H., Cherkashin, N., Carrada, M., Ben Assayag, G., Claverie, A., Tencé, M., Colliex, C. (2008) Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, 108 (4). 346-357 doi:10.1016/j.ultramic.2007.05.008