Cherkashin, N., Bonafos, C., Coffin, H., Carrada, M., Schamm, S., Ben Assayag, G., Chassaing, D., Dimitrakis, P., Normand, P., Perego, M., Fanciulli, M., Muller, T., Heinig, K. H., Claverie, A. (2005) Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), 2 (6). 1907-1911 doi:10.1002/pssc.200460523

See Also

These are possibly similar items as determined by title/reference text matching only.

	Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Assayag, G. Ben, Claverie, A., Müller, T., Heinig, K. H., Perego, M., Fanciulli, M., Dimitrakis, P., Normand, P. (2004) Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation. Journal of Applied Physics, 95 (10). 5696-5702 doi:10.1063/1.1695594
	Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Assayag, G. Ben, Claverie, A., Respaud, M., Dimitrakis, P., Normand, P. (2006) Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers. Journal of Applied Physics, 99 (4). 44302pp. doi:10.1063/1.2171785
	Müller, T., Heinig, K.-H., Möller, W., Bonafos, C., Coffin, H., Cherkashin, N., Assayag, G. Ben, Schamm, S., Zanchi, G., Claverie, A., Tencé, M., Colliex, C. (2004) Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology. Applied Physics Letters, 85 (12). 2373-2375 doi:10.1063/1.1794856
	Schamm, S., Bonafos, C., Coffin, H., Cherkashin, N., Carrada, M., Ben Assayag, G., Claverie, A., Tencé, M., Colliex, C. (2008) Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, 108 (4). 346-357 doi:10.1016/j.ultramic.2007.05.008
	Ioannou-Sougleridis, V., Dimitrakis, P., Vamvakas, V. Em., Normand, P., Bonafos, C., Schamm, S., Cherkashin, N., Ben Assayag, G., Perego, M., Fanciulli, M. (2007) Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, 90 (26). 263513pp. doi:10.1063/1.2752769
	Normand, P., Kapetanakis, E., Dimitrakis, P., Skarlatos, D., Beltsios, K., Tsoukalas, D., Bonafos, C., Ben Assayag, G., Cherkashin, N., Claverie, A., Van Den Berg, J.A., Soncini, V., Agarwal, A., Ameen, M., Perego, M., Fanciulli, M. (2004) Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 216. 228-238 doi:10.1016/j.nimb.2003.11.039
	Bonafos, C., Spiegel, Y., Normand, P., Ben-Assayag, G., Groenen, J., Carrada, M., Dimitrakis, P., Kapetanakis, E., Sahu, B. S., Slaoui, A., Torregrosa, F. (2013) Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories. Applied Physics Letters, 103 (25). 253118pp. doi:10.1063/1.4848780
	Assayag, G. Ben, Bonafos, C., Carrada, M., Claverie, A., Normand, P., Tsoukalas, D. (2003) Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories. Applied Physics Letters, 82 (2). 200-202 doi:10.1063/1.1536026
	Dumas, C., Grisolia, J., Carrada, M., Arbouet, A., Paillard, V., Ben Assayag, G., Bonafos, C., Schamm, S., Claverie, A. (2007) Photoluminescence spectroscopy and transport electrical measurements reveal the quantized features of Si nanocrystals embedded in an ultra thin SiO2 layer. physica status solidi (c), 4 (2). 311-315 doi:10.1002/pssc.200673272
	Perego, M., Ferrari, S., Fanciulli, M., Ben Assayag, G., Bonafos, C., Carrada, M., Claverie, A. (2004) Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS. Applied Surface Science, 231. 813-816 doi:10.1016/j.apsusc.2004.03.124
	Normand, P., Kapetanakis, E., Dimitrakis, P., Tsoukalas, D., Beltsios, K., Cherkashin, N., Bonafos, C., Benassayag, G., Coffin, H., Claverie, A., Soncini, V., Agarwal, A., Ameen, M. (2003) Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters, 83 (1). 168-170 doi:10.1063/1.1588378