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Liu, Po-Tsun, Huang, C. S., Chen, C. W. (2007) Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks. Applied Physics Letters, 90 (18). 182115pp. doi:10.1063/1.2736293

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Reference TypeJournal (article/letter/editorial)
TitleNonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks
JournalApplied Physics Letters
AuthorsLiu, Po-TsunAuthor
Huang, C. S.Author
Chen, C. W.Author
Year2007 (April 30)Volume90
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.2736293Search in ResearchGate
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Mindat Ref. ID8553870Long-form Identifiermindat:1:5:8553870:8
GUID0
Full ReferenceLiu, Po-Tsun, Huang, C. S., Chen, C. W. (2007) Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks. Applied Physics Letters, 90 (18). 182115pp. doi:10.1063/1.2736293
Plain TextLiu, Po-Tsun, Huang, C. S., Chen, C. W. (2007) Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks. Applied Physics Letters, 90 (18). 182115pp. doi:10.1063/1.2736293
In(2007, April) Applied Physics Letters Vol. 90 (18) AIP Publishing

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