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Nuntawong, N., Tatebayashi, J., Wong, P. S., Huffaker, D. L. (2007) Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures. Applied Physics Letters, 90 (16). 163121pp. doi:10.1063/1.2730732

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Reference TypeJournal (article/letter/editorial)
TitleLocalized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures
JournalApplied Physics Letters
AuthorsNuntawong, N.Author
Tatebayashi, J.Author
Wong, P. S.Author
Huffaker, D. L.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2730732Search in ResearchGate
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Mindat Ref. ID8553573Long-form Identifiermindat:1:5:8553573:8
GUID0
Full ReferenceNuntawong, N., Tatebayashi, J., Wong, P. S., Huffaker, D. L. (2007) Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures. Applied Physics Letters, 90 (16). 163121pp. doi:10.1063/1.2730732
Plain TextNuntawong, N., Tatebayashi, J., Wong, P. S., Huffaker, D. L. (2007) Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures. Applied Physics Letters, 90 (16). 163121pp. doi:10.1063/1.2730732
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Wong, P. S., Balakrishnan, G., Nuntawong, N., Tatebayashi, J., Huffaker, D. L. (2007) Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids. Applied Physics Letters, 90 (18). 183103pp. doi:10.1063/1.2732825
Nuntawong, N., Huang, S., Jiang, Y. B., Hains, C. P., Huffaker, D. L. (2005) Defect dissolution in strain-compensated stacked InAs∕GaAs quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters, 87 (11). 113105pp. doi:10.1063/1.2042638
Liang, B. L., Wong, P. S., Nuntawong, N., Albrecht, A. R., Tatebayashi, J., Rotter, T. J., Balakrishnan, G., Huffaker, D. L. (2007) Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids. Applied Physics Letters, 91 (24). 243106pp. doi:10.1063/1.2821121
Tatebayashi, J., Nuntawong, N., Xin, Y. C., Wong, P. S., Huang, S. H., Hains, C. P., Lester, L. F., Huffaker, D. L. (2006) Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition. Applied Physics Letters, 88 (22). 221107pp. doi:10.1063/1.2208553
Tran, T., Muller, A., Shih, C. K., Wong, P. S., Balakrishnan, G., Nuntawong, N., Tatebayashi, J., Huffaker, D. L. (2007) Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids. Applied Physics Letters, 91 (13). 133104pp. doi:10.1063/1.2790498
Nuntawong, N., Birudavolu, S., Hains, C. P., Huang, S., Xu, H., Huffaker, D. L. (2004) Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85 (15). 3050-3052 doi:10.1063/1.1805707
Nuntawong, N., Xin, Y. C., Birudavolu, S., Wong, P. S., Huang, S., Hains, C. P., Huffaker, D. L. (2005) Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition. Applied Physics Letters, 86 (19). 193115pp. doi:10.1063/1.1926413
Tatebayashi, J, Nuntawong, N, Wong, P S, Xin, Y-C, Lester, L F, Huffaker, D L (2009) Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. Journal of Physics D: Applied Physics, 42. 73002pp. doi:10.1088/0022-3727/42/7/073002
Laghumavarapu, R. B., El-Emawy, M., Nuntawong, N., Moscho, A., Lester, L. F., Huffaker, D. L. (2007) Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers. Applied Physics Letters, 91 (24). 243115pp. doi:10.1063/1.2816904
Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Dawson, L. R., Balakrishnan, G., Huffaker, D. L. (2006) Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters, 89 (20). 203116pp. doi:10.1063/1.2390654
Wong, P. S., Liang, B. L., Lin, A., Tatebayashi, J., Huffaker, D. L. (2010) 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers. Applied Physics Letters, 97 (14). 143111pp. doi:10.1063/1.3499287
 
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