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Nuntawong, N., Birudavolu, S., Hains, C. P., Huang, S., Xu, H., Huffaker, D. L. (2004) Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85 (15). 3050-3052 doi:10.1063/1.1805707

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Reference TypeJournal (article/letter/editorial)
TitleEffect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsNuntawong, N.Author
Birudavolu, S.Author
Hains, C. P.Author
Huang, S.Author
Xu, H.Author
Huffaker, D. L.Author
Year2004 (October 11)Volume85
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.1805707Search in ResearchGate
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Mindat Ref. ID8540233Long-form Identifiermindat:1:5:8540233:3
GUID0
Full ReferenceNuntawong, N., Birudavolu, S., Hains, C. P., Huang, S., Xu, H., Huffaker, D. L. (2004) Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85 (15). 3050-3052 doi:10.1063/1.1805707
Plain TextNuntawong, N., Birudavolu, S., Hains, C. P., Huang, S., Xu, H., Huffaker, D. L. (2004) Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85 (15). 3050-3052 doi:10.1063/1.1805707
In(2004, October) Applied Physics Letters Vol. 85 (15) AIP Publishing

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Nuntawong, N., Huang, S., Jiang, Y. B., Hains, C. P., Huffaker, D. L. (2005) Defect dissolution in strain-compensated stacked InAs∕GaAs quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters, 87 (11). 113105pp. doi:10.1063/1.2042638
Nuntawong, N., Xin, Y. C., Birudavolu, S., Wong, P. S., Huang, S., Hains, C. P., Huffaker, D. L. (2005) Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition. Applied Physics Letters, 86 (19). 193115pp. doi:10.1063/1.1926413
Tatebayashi, J., Nuntawong, N., Xin, Y. C., Wong, P. S., Huang, S. H., Hains, C. P., Lester, L. F., Huffaker, D. L. (2006) Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition. Applied Physics Letters, 88 (22). 221107pp. doi:10.1063/1.2208553
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Nuntawong, N., Tatebayashi, J., Wong, P. S., Huffaker, D. L. (2007) Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures. Applied Physics Letters, 90 (16). 163121pp. doi:10.1063/1.2730732
El-Emawy, A. A., Birudavolu, S., Wong, P. S., Jiang, Y.-B., Xu, H., Huang, S., Huffaker, D. L. (2003) Formation trends in quantum dot growth using metalorganic chemical vapor deposition. Journal of Applied Physics, 93 (6). 3529-3534 doi:10.1063/1.1543647
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Tatebayashi, Jun, Arakawa, Yasuhiko, Hatori, Nobuaki, Ebe, Hiroji, Sugawara, Mitsuru, Sudo, Hisao, Kuramata, Akito (2004) InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots. Applied Physics Letters, 85 (6). 1024-1026 doi:10.1063/1.1781741
Laghumavarapu, R. B., El-Emawy, M., Nuntawong, N., Moscho, A., Lester, L. F., Huffaker, D. L. (2007) Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers. Applied Physics Letters, 91 (24). 243115pp. doi:10.1063/1.2816904
Liang, B. L., Wong, P. S., Nuntawong, N., Albrecht, A. R., Tatebayashi, J., Rotter, T. J., Balakrishnan, G., Huffaker, D. L. (2007) Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids. Applied Physics Letters, 91 (24). 243106pp. doi:10.1063/1.2821121
Fu, L., McKerracher, I., Tan, H. H., Jagadish, C., Vukmirović, N., Harrison, P. (2007) Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition. Applied Physics Letters, 91 (7). 73515pp. doi:10.1063/1.2770765
 
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