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Tatebayashi, J., Khoshakhlagh, A., Huang, S. H., Dawson, L. R., Balakrishnan, G., Huffaker, D. L. (2006) Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters, 89 (20). 203116pp. doi:10.1063/1.2390654

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Reference TypeJournal (article/letter/editorial)
TitleFormation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots
JournalApplied Physics Letters
AuthorsTatebayashi, J.Author
Khoshakhlagh, A.Author
Huang, S. H.Author
Dawson, L. R.Author
Balakrishnan, G.Author
Huffaker, D. L.Author
Year2006 (November 13)Volume89
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2390654Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8550880Long-form Identifiermindat:1:5:8550880:4
GUID0
Full ReferenceTatebayashi, J., Khoshakhlagh, A., Huang, S. H., Dawson, L. R., Balakrishnan, G., Huffaker, D. L. (2006) Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters, 89 (20). 203116pp. doi:10.1063/1.2390654
Plain TextTatebayashi, J., Khoshakhlagh, A., Huang, S. H., Dawson, L. R., Balakrishnan, G., Huffaker, D. L. (2006) Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters, 89 (20). 203116pp. doi:10.1063/1.2390654
In(2006, November) Applied Physics Letters Vol. 89 (20) AIP Publishing

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