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Tatebayashi, J, Nuntawong, N, Wong, P S, Xin, Y-C, Lester, L F, Huffaker, D L (2009) Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. Journal of Physics D: Applied Physics, 42. 73002pp. doi:10.1088/0022-3727/42/7/073002

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Reference TypeJournal (article/letter/editorial)
TitleStrain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
JournalJournal of Physics D: Applied Physics
AuthorsTatebayashi, JAuthor
Nuntawong, NAuthor
Wong, P SAuthor
Xin, Y-CAuthor
Lester, L FAuthor
Huffaker, D LAuthor
Year2009 (April 7)Volume42
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/42/7/073002Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5675835Long-form Identifiermindat:1:5:5675835:7
GUID0
Full ReferenceTatebayashi, J, Nuntawong, N, Wong, P S, Xin, Y-C, Lester, L F, Huffaker, D L (2009) Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. Journal of Physics D: Applied Physics, 42. 73002pp. doi:10.1088/0022-3727/42/7/073002
Plain TextTatebayashi, J, Nuntawong, N, Wong, P S, Xin, Y-C, Lester, L F, Huffaker, D L (2009) Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. Journal of Physics D: Applied Physics, 42. 73002pp. doi:10.1088/0022-3727/42/7/073002
In(2009) Journal of Physics D: Applied Physics Vol. 42. IOP Publishing

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Tatebayashi, J., Nuntawong, N., Xin, Y. C., Wong, P. S., Huang, S. H., Hains, C. P., Lester, L. F., Huffaker, D. L. (2006) Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition. Applied Physics Letters, 88 (22). 221107pp. doi:10.1063/1.2208553
Nuntawong, N., Tatebayashi, J., Wong, P. S., Huffaker, D. L. (2007) Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures. Applied Physics Letters, 90 (16). 163121pp. doi:10.1063/1.2730732
Huffaker, D. L., Hains, C. P., Nuntawong, N., Xin, Y. C., Wong, P. S., Xue, L., Brueck, S. R. J., Lester, L. (2006) Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy. Journal of Applied Physics, 99 (3). 33503pp. doi:10.1063/1.2165415
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Liang, S, Zhu, H L, Ye, X L, Pan, J Q, Zhao, L J, Wang, W (2009) Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (1 0 0) substrates. Journal of Physics D: Applied Physics, 42. 55310pp. doi:10.1088/0022-3727/42/5/055310
Wong, P. S., Balakrishnan, G., Nuntawong, N., Tatebayashi, J., Huffaker, D. L. (2007) Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids. Applied Physics Letters, 90 (18). 183103pp. doi:10.1063/1.2732825
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Wong, P. S., Liang, B. L., Lin, A., Tatebayashi, J., Huffaker, D. L. (2010) 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers. Applied Physics Letters, 97 (14). 143111pp. doi:10.1063/1.3499287
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