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Sullivan, J. L., Yu, W., Saied, S. O. (1994) ARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces. Surface and Interface Analysis, 22 (1). 515-519 doi:10.1002/sia.7402201109

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Reference TypeJournal (article/letter/editorial)
TitleARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces
JournalSurface and Interface Analysis
AuthorsSullivan, J. L.Author
Yu, W.Author
Saied, S. O.Author
Year1994 (July)Volume22
Issue1
PublisherWiley
DOIdoi:10.1002/sia.7402201109Search in ResearchGate
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Mindat Ref. ID6504752Long-form Identifiermindat:1:5:6504752:7
GUID0
Full ReferenceSullivan, J. L., Yu, W., Saied, S. O. (1994) ARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces. Surface and Interface Analysis, 22 (1). 515-519 doi:10.1002/sia.7402201109
Plain TextSullivan, J. L., Yu, W., Saied, S. O. (1994) ARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces. Surface and Interface Analysis, 22 (1). 515-519 doi:10.1002/sia.7402201109
In(1994, July) Surface and Interface Analysis Vol. 22 (1) Wiley

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Sullivan, J.L., Yu, W., Saied, S.O. (1995) A study of the compositional changes in chemically etched, Ar ion bombarded and reactive ion etched GaAs(100) surfaces by means of ARXPS and LEISS. Applied Surface Science, 90. 309-319 doi:10.1016/0169-4332(95)00169-7
Yu, W., Sullivan, J.L., Saied, S.O. (1996) XPS and LEISS studies of ion bombarded GaSb, InSb and CdSe surfaces. Surface Science, 352. 781-787 doi:10.1016/0039-6028(95)01228-1
Bertóti, I., Mohai, M., Sullivan, J. L., Saied, S. O. (1994) Surface chemical changes in PVD TiN layers induced by ion bombardment. Surface and Interface Analysis, 21 (6). 467-473 doi:10.1002/sia.740210626
Bernstein, R. W., Grepstad, J. K. (1989) XPS intensity analysis for assessment of thickness and composition of thin overlayer films: Application to chemically etched GaAs(100) surfaces. Surface and Interface Analysis, 14 (3). 109-114 doi:10.1002/sia.740140303
SAIED, S. O., SULLIVAN, J. L. (2001) PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs. Surface Review and Letters, 8 (5). 501-504 doi:10.1142/s0218625x01001324
Xu, N. S., Sullivan, J. L. (1990) Helium ion and fast atom scattering from polycrystalline copper surfaces. Surface and Interface Analysis, 16 (1). 18-24 doi:10.1002/sia.740160107
Sullivan, J. L., Saied, S. O. (1988) A study of the development of tribological oxide protective films mainly by Auger electron spectroscopy. Surface and Interface Analysis, 12 (11). 541-547 doi:10.1002/sia.740121102
Giles, R., Sullivan, J. L., Pearce, C. G. (1994) The design and development of a time of flight fast atom/ion scattering spectrometer. Surface and Interface Analysis, 22 (1). 576-580 doi:10.1002/sia.7402201122
Yu, W., Sullivan, J.L., Saied, S.O. (1994) Ion bombardment effects in GeSi(100) surfaces studied by XPS and ISS. Surface Science, 307. 691-697 doi:10.1016/0039-6028(94)91478-8
Xu, N. S., Pearce, C. G., Sullivan, J. L. (1990) A time-of-flight study of water molecular ion and neutral scattering from copper surfaces. Surface and Interface Analysis, 16 (1). 154-158 doi:10.1002/sia.740160130
Werner, H. W. (1994) Opening speech. Surface and Interface Analysis, 22 (1). doi:10.1002/sia.740220103
 
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