SAIED, S. O., SULLIVAN, J. L. (2001) PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs. Surface Review and Letters, 8 (5). 501-504 doi:10.1142/s0218625x01001324

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Reference Type	Journal (article/letter/editorial)
Title	PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs
Journal	Surface Review and Letters
Authors	SAIED, S. O.		Author
Authors	SULLIVAN, J. L.		Author
Year	2001 (October)	Volume	8
Issue	5
Publisher	World Scientific Pub Co Pte Lt
DOI	doi:10.1142/s0218625x01001324Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6520044	Long-form Identifier	mindat:1:5:6520044:5
GUID	0
Full Reference	SAIED, S. O., SULLIVAN, J. L. (2001) PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs. Surface Review and Letters, 8 (5). 501-504 doi:10.1142/s0218625x01001324
Plain Text	SAIED, S. O., SULLIVAN, J. L. (2001) PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs. Surface Review and Letters, 8 (5). 501-504 doi:10.1142/s0218625x01001324
In	(2001, October) Surface Review and Letters Vol. 8 (5) World Scientific Pub Co Pte Lt

	Sullivan, J. L., Yu, W., Saied, S. O. (1994) ARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces. Surface and Interface Analysis, 22 (1). 515-519 doi:10.1002/sia.7402201109
	Sullivan, J.L., Yu, W., Saied, S.O. (1995) A study of the compositional changes in chemically etched, Ar ion bombarded and reactive ion etched GaAs(100) surfaces by means of ARXPS and LEISS. Applied Surface Science, 90. 309-319 doi:10.1016/0169-4332(95)00169-7
	*Nagata, Koichi, Nakajima, Osaake, Ishibashi, Tadao (1986) Surface Damage of Reactive Ion Beam Etched GaAs. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l510*
	Bertóti, I., Mohai, M., Sullivan, J. L., Saied, S. O. (1994) Surface chemical changes in PVD TiN layers induced by ion bombardment. Surface and Interface Analysis, 21 (6). 467-473 doi:10.1002/sia.740210626
	*Ou, S. S., Yang, J. J., Jansen, M. (1990) 5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet. Applied Physics Letters, 57 (18). 1861-1863 doi:10.1063/1.104039*
	Henry, A., Awadelkarim, O. O., Lindström, J. L., Oehrlein, G. S. (1989) Electrical studies on plasma and reactive‐ion‐etched silicon. Journal of Applied Physics, 66 (11). 5388-5393 doi:10.1063/1.343683
	*Sullivan, J L, Saied, S O, Choudhury, T (1993) Effects of low-energy ion beam bombardment on metal oxides. Journal of Physics: Condensed Matter, 5 (33). doi:10.1088/0953-8984/5/33a/101*
	CHEN, H. Y., TANG, S., ZHONG, Z. Y., LIN, J., TAN, K. L. (2001) XPS AND FTIR STUDIES OF Mo/ZSM-5 CATALYSTS FOR NONOXIDATIVE CONVERSION OF METHANE TO AROMATICS. Surface Review and Letters, 8 (6). 627-632 doi:10.1142/s0218625x0100152x
	*(2001) PREFACE. Surface Review and Letters, 8 (5). doi:10.1142/s0218625x01001245*
	*Lee, B. S. (1990) Reactive Ion Etching of GaAs in Chlorine and Resulting Surface Damage. Journal of the Electrochemical Society, 137. 980pp. doi:10.1149/1.2086591*
	*Bond, P. D. (1978) Polarizations in Heavy-Ion Reactions. Physical Review Letters, 40 (8). 501-504 doi:10.1103/physrevlett.40.501*

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SAIED, S. O., SULLIVAN, J. L. (2001) PLASMA DAMAGE IN METHANE–HYDROGEN REACTIVE ION ETCHED GaAs. Surface Review and Letters, 8 (5). 501-504 doi:10.1142/s0218625x01001324

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