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Globus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6

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Reference TypeJournal (article/letter/editorial)
TitleDefect-related absorption in hydrogenated silicon films
JournalJournal of Non-Crystalline Solids
AuthorsGlobus, TAuthor
Roca i Cabarrocas, PAuthor
Gelmont, BAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01206-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID640379Long-form Identifiermindat:1:5:640379:3
GUID0
Full ReferenceGlobus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6
Plain TextGlobus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Fontcuberta i Morral, A., Hofmeister, H., Roca i Cabarrocas, P. (2002) Structure of plasma-deposited polymorphous silicon. Journal of Non-Crystalline Solids, 299. 284-289 doi:10.1016/s0022-3093(01)01007-9
Paillard, Vincent, Puech, Pascal, Roca i Cabarrocas, Pere (2002) Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy. Journal of Non-Crystalline Solids, 299. 280-283 doi:10.1016/s0022-3093(02)00936-5
Fontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8
Bronner, W, Kleider, J.P, Brüggemann, R, Roca i Cabarrocas, P, Mencaraglia, D, Mehring, M (2002) Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon. Journal of Non-Crystalline Solids, 299. 551-555 doi:10.1016/s0022-3093(01)01201-7
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Kleider, J.P, Roca i Cabarrocas, P (2002) Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon. Journal of Non-Crystalline Solids, 299. 599-604 doi:10.1016/s0022-3093(01)01025-0
Ram, Sanjay K., Kumar, Satyendra, Vanderhaghen, Régis, Roca i Cabarrocas, P. (2002) Investigations of the electron transport behavior in microcrystalline Si films. Journal of Non-Crystalline Solids, 299. 411-415 doi:10.1016/s0022-3093(01)00955-3
Poissant, Y, Chatterjee, P, Roca i Cabarrocas, P (2002) Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-art. Journal of Non-Crystalline Solids, 299. 1173-1178 doi:10.1016/s0022-3093(01)01084-5
Voz, C, Puigdollers, J, Orpella, A, Alcubilla, R, Fontcuberta i Morral, A, Tripathi, V, Roca i Cabarrocas, P (2002) Thin-film transistors with polymorphous silicon active layer. Journal of Non-Crystalline Solids, 299. 1345-1350 doi:10.1016/s0022-3093(01)01099-7
Kasouit, S., Kumar, S., Vanderhaghen, R., Roca i Cabarrocas, P., French, I. (2002) Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor. Journal of Non-Crystalline Solids, 299. 113-117 doi:10.1016/s0022-3093(01)01187-5
Srivastava, Alok, Agarwal, P, Agarwal, S.C (2002) Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin films. Journal of Non-Crystalline Solids, 299. 430-433 doi:10.1016/s0022-3093(01)01176-0
 
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