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Fontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8

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Reference TypeJournal (article/letter/editorial)
TitleEtching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films
JournalJournal of Non-Crystalline Solids
AuthorsFontcuberta i Morral, AAuthor
Roca i Cabarrocas, PAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01001-8Search in ResearchGate
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Mindat Ref. ID640179Long-form Identifiermindat:1:5:640179:9
GUID0
Full ReferenceFontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8
Plain TextFontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Fontcuberta i Morral, A., Hofmeister, H., Roca i Cabarrocas, P. (2002) Structure of plasma-deposited polymorphous silicon. Journal of Non-Crystalline Solids, 299. 284-289 doi:10.1016/s0022-3093(01)01007-9
Voz, C, Puigdollers, J, Orpella, A, Alcubilla, R, Fontcuberta i Morral, A, Tripathi, V, Roca i Cabarrocas, P (2002) Thin-film transistors with polymorphous silicon active layer. Journal of Non-Crystalline Solids, 299. 1345-1350 doi:10.1016/s0022-3093(01)01099-7
Globus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6
Fontcuberta i Morral, A., Brenot, R., Hamers, E.A.G., Vanderhaghen, R., Roca i Cabarrocas, P. (2000) In situ investigation of polymorphous silicon deposition. Journal of Non-Crystalline Solids, 266. 48-53 doi:10.1016/s0022-3093(99)00723-1
Vignoli, S, Fontcuberta i Morral, A, Butté, R, Meaudre, R, Meaudre, M (2002) Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 220-225 doi:10.1016/s0022-3093(01)00951-6
Fontcuberta i Morral, A., Roca i Cabarrocas, P. (2006) Role of hydrogen diffusion on the growth of polymorphous and microcrystalline silicon thin films. The European Physical Journal Applied Physics, 35 (3). 165-172 doi:10.1051/epjap:2006094
Kalache, B., Kosarev, A.I., Vanderhaghen, R., Roca i Cabarrocas, P. (2002) Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure. Journal of Non-Crystalline Solids, 299. 63-67 doi:10.1016/s0022-3093(01)00995-4
Kasouit, S., Kumar, S., Vanderhaghen, R., Roca i Cabarrocas, P., French, I. (2002) Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor. Journal of Non-Crystalline Solids, 299. 113-117 doi:10.1016/s0022-3093(01)01187-5
Hamma, S, Roca i Cabarrocas, P (1998) Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution. Journal of Non-Crystalline Solids, 227. 852-856 doi:10.1016/s0022-3093(98)00342-1
Kaïl, F., Fontcuberta I Morral, A., Hadjadj, A., Roca I Cabarrocas, P., Beorchia, A. (2004) Hydrogen-plasma etching of hydrogenated amorphous silicon: a study by a combination of spectroscopic ellipsometry and trap-limited diffusion model. Philosophical Magazine, 84 (6). 595-609 doi:10.1080/14786430310001635440
Paillard, Vincent, Puech, Pascal, Roca i Cabarrocas, Pere (2002) Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy. Journal of Non-Crystalline Solids, 299. 280-283 doi:10.1016/s0022-3093(02)00936-5
 
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