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Kleider, J.P, Roca i Cabarrocas, P (2002) Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon. Journal of Non-Crystalline Solids, 299. 599-604 doi:10.1016/s0022-3093(01)01025-0

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Reference TypeJournal (article/letter/editorial)
TitleReverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsKleider, J.PAuthor
Roca i Cabarrocas, PAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01025-0Search in ResearchGate
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Mindat Ref. ID640205Long-form Identifiermindat:1:5:640205:5
GUID0
Full ReferenceKleider, J.P, Roca i Cabarrocas, P (2002) Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon. Journal of Non-Crystalline Solids, 299. 599-604 doi:10.1016/s0022-3093(01)01025-0
Plain TextKleider, J.P, Roca i Cabarrocas, P (2002) Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon. Journal of Non-Crystalline Solids, 299. 599-604 doi:10.1016/s0022-3093(01)01025-0
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Bronner, W, Kleider, J.P, Brüggemann, R, Roca i Cabarrocas, P, Mencaraglia, D, Mehring, M (2002) Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon. Journal of Non-Crystalline Solids, 299. 551-555 doi:10.1016/s0022-3093(01)01201-7
Fontcuberta i Morral, A., Hofmeister, H., Roca i Cabarrocas, P. (2002) Structure of plasma-deposited polymorphous silicon. Journal of Non-Crystalline Solids, 299. 284-289 doi:10.1016/s0022-3093(01)01007-9
Poissant, Y, Chatterjee, P, Roca i Cabarrocas, P (2002) Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-art. Journal of Non-Crystalline Solids, 299. 1173-1178 doi:10.1016/s0022-3093(01)01084-5
Globus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6
Roca i Cabarrocas, P (2000) Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films. Journal of Non-Crystalline Solids, 266. 31-37 doi:10.1016/s0022-3093(99)00714-0
Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M (1998) Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227. 96-99 doi:10.1016/s0022-3093(98)00217-8
Voz, C, Puigdollers, J, Orpella, A, Alcubilla, R, Fontcuberta i Morral, A, Tripathi, V, Roca i Cabarrocas, P (2002) Thin-film transistors with polymorphous silicon active layer. Journal of Non-Crystalline Solids, 299. 1345-1350 doi:10.1016/s0022-3093(01)01099-7
Tchakarov, S., Dutta, U., Roca i Cabarrocas, P., Chatterjee, P. (2004) Modeling of reverse bias dark currents in pin structures using amorphous and polymorphous silicon. Journal of Non-Crystalline Solids, 338. 766-771 doi:10.1016/j.jnoncrysol.2004.03.087
Guedj, C., Moussy, N., Rabaud, W., Roca i Cabarrocas, P., Tchakarov, S., Kleider, J.P. (2004) UV–visible sensors based on polymorphous silicon. Journal of Non-Crystalline Solids, 338. 749-753 doi:10.1016/j.jnoncrysol.2004.03.083
Kalache, B., Kosarev, A.I., Vanderhaghen, R., Roca i Cabarrocas, P. (2002) Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure. Journal of Non-Crystalline Solids, 299. 63-67 doi:10.1016/s0022-3093(01)00995-4
Fontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8
 
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