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Chambouleyron, I., Fajardo, F., Zanatta, A.R. (2002) Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids, 299. 143-147 doi:10.1016/s0022-3093(01)00999-1

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Reference TypeJournal (article/letter/editorial)
TitleMicroscopic mechanisms behind the Al-induced crystallization of a-Ge:H films
JournalJournal of Non-Crystalline Solids
AuthorsChambouleyron, I.Author
Fajardo, F.Author
Zanatta, A.R.Author
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)00999-1Search in ResearchGate
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Mindat Ref. ID640176Long-form Identifiermindat:1:5:640176:8
GUID0
Full ReferenceChambouleyron, I., Fajardo, F., Zanatta, A.R. (2002) Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids, 299. 143-147 doi:10.1016/s0022-3093(01)00999-1
Plain TextChambouleyron, I., Fajardo, F., Zanatta, A.R. (2002) Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids, 299. 143-147 doi:10.1016/s0022-3093(01)00999-1
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Santos, Paulo V, Zanatta, A.R, Dondeo, F, Trampert, A, Jahn, U, Comedi, D, Pudenzi, M.A.A, Chambouleyron, I (2002) Pulsed laser crystallization and structuring of a-Ge on GaAs. Journal of Non-Crystalline Solids, 299. 137-142 doi:10.1016/s0022-3093(01)00998-x
Reis, F.T, Chambouleyron, I (2002) Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films. Journal of Non-Crystalline Solids, 299. 179-184 doi:10.1016/s0022-3093(01)01159-0
Ribeiro, C.T.M, Zanatta, A.R, Alvarez, F (2002) X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering. Journal of Non-Crystalline Solids, 299. 323-327 doi:10.1016/s0022-3093(01)01190-5
Champi, A, Comedi, D (2002) Study of the pinhole density in a-Ge:H and a-Ge0.9Si0.1:H thin films. Journal of Non-Crystalline Solids, 299. 318-322 doi:10.1016/s0022-3093(01)01191-7
Fajardo, F., Zanatta, A. R., Chambouleyron, I. (2005) Annealing effects on crystallized Al-doped a-Ge:H thin films. physica status solidi (c), 2 (10). 3750-3753 doi:10.1002/pssc.200461811
Sameshima, T, Kaneko, Y, Andoh, N (2002) Rapid crystallization of silicon films using pulsed current-induced joule heating. Journal of Non-Crystalline Solids, 299. 746-750 doi:10.1016/s0022-3093(01)01109-7
Gall, S, Muske, M, Sieber, I, Nast, O, Fuhs, W (2002) Aluminum-induced crystallization of amorphous silicon. Journal of Non-Crystalline Solids, 299. 741-745 doi:10.1016/s0022-3093(01)01108-5
Cohen, J.David, Heath, Jennifer, Palinginis, Kimon, Yang, Jeffrey C, Guha, Subhendu (2002) Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys. Journal of Non-Crystalline Solids, 299. 449-454 doi:10.1016/s0022-3093(01)01172-3
Comedi, D., Zanatta, A.R., Alvarez, F., Chambouleyron, I. (1996) Electronic structure of amorphous germanium-nitrogen alloys: a UV photoelectron spectroscopy study. Journal of Non-Crystalline Solids, 198. 136-139 doi:10.1016/0022-3093(95)00673-7
Fontcuberta i Morral, A, Roca i Cabarrocas, P (2002) Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin films. Journal of Non-Crystalline Solids, 299. 196-200 doi:10.1016/s0022-3093(01)01001-8
Chambouleyron, I., Fajardo, F., Zanatta, A. R. (2001) Aluminum-induced crystallization of hydrogenated amorphous germanium thin films. Applied Physics Letters, 79 (20). 3233-3235 doi:10.1063/1.1415772
 
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