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Ribeiro, C.T.M, Zanatta, A.R, Alvarez, F (2002) X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering. Journal of Non-Crystalline Solids, 299. 323-327 doi:10.1016/s0022-3093(01)01190-5

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Reference TypeJournal (article/letter/editorial)
TitleX-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering
JournalJournal of Non-Crystalline Solids
AuthorsRibeiro, C.T.MAuthor
Zanatta, A.RAuthor
Alvarez, FAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01190-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID640362Long-form Identifiermindat:1:5:640362:5
GUID0
Full ReferenceRibeiro, C.T.M, Zanatta, A.R, Alvarez, F (2002) X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering. Journal of Non-Crystalline Solids, 299. 323-327 doi:10.1016/s0022-3093(01)01190-5
Plain TextRibeiro, C.T.M, Zanatta, A.R, Alvarez, F (2002) X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering. Journal of Non-Crystalline Solids, 299. 323-327 doi:10.1016/s0022-3093(01)01190-5
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Comedi, D., Zanatta, A.R., Alvarez, F., Chambouleyron, I. (1996) Electronic structure of amorphous germanium-nitrogen alloys: a UV photoelectron spectroscopy study. Journal of Non-Crystalline Solids, 198. 136-139 doi:10.1016/0022-3093(95)00673-7
Ribeiro, C.T.M., Zanatta, A.R. (2006) Spectroscopic investigation of Nd-doped amorphous SiN films. Journal of Non-Crystalline Solids, 352 (9) 1286-1289 doi:10.1016/j.jnoncrysol.2005.11.142
Saleh, R, Munisa, L, Beyer, W (2002) Structural characterization of a-Si:C:H alloys prepared by dc sputtering. Journal of Non-Crystalline Solids, 299. 891-895 doi:10.1016/s0022-3093(01)00989-9
Chambouleyron, I., Fajardo, F., Zanatta, A.R. (2002) Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids, 299. 143-147 doi:10.1016/s0022-3093(01)00999-1
de Lima, M.M, Marques, F.C (2002) On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering. Journal of Non-Crystalline Solids, 299. 605-609 doi:10.1016/s0022-3093(01)01205-4
Ribeiro, C.T.M., Zanatta, A.R. (2004) Photoluminescence of a-GeN alloys doped with different rare-earth ions. Journal of Non-Crystalline Solids, 338. 469-472 doi:10.1016/j.jnoncrysol.2004.03.021
Zanatta, A.R., Ribeiro, C.T.M., Jahn, U. (2004) Photon and electron excitation of rare-earth-doped amorphous SiN films. Journal of Non-Crystalline Solids, 338. 473-476 doi:10.1016/j.jnoncrysol.2004.03.022
Santos, Paulo V, Zanatta, A.R, Dondeo, F, Trampert, A, Jahn, U, Comedi, D, Pudenzi, M.A.A, Chambouleyron, I (2002) Pulsed laser crystallization and structuring of a-Ge on GaAs. Journal of Non-Crystalline Solids, 299. 137-142 doi:10.1016/s0022-3093(01)00998-x
Alvarez, Fernando, Valladares, Ariel A. (2002) Ab initio generation of amorphous semiconducting structures. The case of a-Si. Journal of Non-Crystalline Solids, 299. 259-264 doi:10.1016/s0022-3093(01)01005-5
Vilcarromero, J, Marques, F.C, Andreu, J (1998) Bonding properties of rf-co-sputtering amorphous Ge–C films studied by X-ray photoelectron and Raman spectroscopies. Journal of Non-Crystalline Solids, 227. 427-431 doi:10.1016/s0022-3093(98)00085-4
Zhu, Kai, Schiff, E.A, Ganguly, G (2002) Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells. Journal of Non-Crystalline Solids, 299. 1162-1166 doi:10.1016/s0022-3093(01)01136-x
 
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