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Reis, F.T, Chambouleyron, I (2002) Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films. Journal of Non-Crystalline Solids, 299. 179-184 doi:10.1016/s0022-3093(01)01159-0

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films
JournalJournal of Non-Crystalline Solids
AuthorsReis, F.TAuthor
Chambouleyron, IAuthor
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01159-0Search in ResearchGate
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Mindat Ref. ID640328Long-form Identifiermindat:1:5:640328:1
GUID0
Full ReferenceReis, F.T, Chambouleyron, I (2002) Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films. Journal of Non-Crystalline Solids, 299. 179-184 doi:10.1016/s0022-3093(01)01159-0
Plain TextReis, F.T, Chambouleyron, I (2002) Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films. Journal of Non-Crystalline Solids, 299. 179-184 doi:10.1016/s0022-3093(01)01159-0
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Reis, F.T, Comedi, D, Chambouleyron, I (2000) Temperature dependence of the photoconductivity of gallium-doped hydrogenated amorphous germanium films. Journal of Non-Crystalline Solids, 266. 730-734 doi:10.1016/s0022-3093(99)00791-7
Srivastava, Alok, Agarwal, P, Agarwal, S.C (2002) Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin films. Journal of Non-Crystalline Solids, 299. 430-433 doi:10.1016/s0022-3093(01)01176-0
Günes, Mehmet, Johanson, Robert E, Kasap, S.O, Yang, Jeffrey C, Guha, Subhendu (2002) Conductance fluctuations in undoped hydrogenated amorphous silicon–germanium alloy thin films. Journal of Non-Crystalline Solids, 299. 425-429 doi:10.1016/s0022-3093(01)01016-x
Reis, F. T., Comedi, D., Chambouleyron, I. (1998) Steady-state photoconductivity of gallium- and indium-doped hydrogenated amorphous germanium thin films. Journal of Applied Physics, 83 (1). 353-357 doi:10.1063/1.366689
Marques, F.C, de Lima, M.M, Taylor, P.C (2002) Recombination mechanism of excess carriers in hydrogenated amorphous germanium. Journal of Non-Crystalline Solids, 299. 571-574 doi:10.1016/s0022-3093(01)01200-5
Lyubin, V, Klebanov, M, Tikhomirov, V.K (2002) Photoinduced anisotropy of photoconductivity in chalcogenide amorphous films. Journal of Non-Crystalline Solids, 299. 945-948 doi:10.1016/s0022-3093(01)01058-4
Comedi, D, Dondeo, F, Chambouleyron, I, Peng, Z.L, Mascher, P (2000) Compact hydrogenated amorphous germanium films by ion-beam sputtering deposition. Journal of Non-Crystalline Solids, 266. 713-716 doi:10.1016/s0022-3093(00)00018-1
Graeff, C.F.O., Brandt, M.S., Eberhardt, K., Chambouleyron, I., Stutzmann, M. (1993) Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys. Journal of Non-Crystalline Solids, 164. 15-18 doi:10.1016/0022-3093(93)90481-c
Chambouleyron, I., Fajardo, F., Zanatta, A.R. (2002) Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films. Journal of Non-Crystalline Solids, 299. 143-147 doi:10.1016/s0022-3093(01)00999-1
Chambouleyron, I, Comedi, D (1998) Column III and V elements as substitutional dopants in hydrogenated amorphous germanium. Journal of Non-Crystalline Solids, 227. 411-417 doi:10.1016/s0022-3093(98)00084-2
Koós, M, Füle, M, Veres, M, Tóth, S, Pócsik, I (2002) Composite character of the photoluminescence in hydrogenated amorphous carbon films. Journal of Non-Crystalline Solids, 299. 852-857 doi:10.1016/s0022-3093(01)01104-8
 
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