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Sorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158

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Reference TypeJournal (article/letter/editorial)
TitleStructural characterization of GaN epilayers on silicon: Effect of buffer layers
JournalTechnical Physics Letters
AuthorsSorokin, L. M.Author
Kalmykov, A. E.Author
Bessolov, V. N.Author
Feoktistov, N. A.Author
Osipov, A. V.Author
Kukushkin, S. A.Author
Veselov, N. V.Author
Year2011 (April)Volume37
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785011040158Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6207631Long-form Identifiermindat:1:5:6207631:5
GUID0
Full ReferenceSorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158
Plain TextSorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158
In(n.d.) Technical Physics Letters Vol. 37. Pleiades Publishing Ltd

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Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046
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