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Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskii, S. D., Fradkov, A. L., Fedirko, V. A. (2002) High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28. 994-996 doi:10.1134/1.1535513

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Reference TypeJournal (article/letter/editorial)
TitleHigh-temperature annealing of bulk GaN layers
JournalTechnical Physics Letters
AuthorsBessolov, V. N.Author
Zhilyaev, Yu. V.Author
Kompan, M. E.Author
Konenkova, E. V.Author
Kukushkin, S. A.Author
Mesh, M. V.Author
Raevskii, S. D.Author
Fradkov, A. L.Author
Fedirko, V. A.Author
Year2002 (December)Volume28
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1535513Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6204583Long-form Identifiermindat:1:5:6204583:8
GUID0
Full ReferenceBessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskii, S. D., Fradkov, A. L., Fedirko, V. A. (2002) High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28. 994-996 doi:10.1134/1.1535513
Plain TextBessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskii, S. D., Fradkov, A. L., Fedirko, V. A. (2002) High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28. 994-996 doi:10.1134/1.1535513
In(n.d.) Technical Physics Letters Vol. 28. Pleiades Publishing Ltd

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Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Kukushkin, S. A., Luk’yanov, A. V., Raevskii, S. D., Fedirko, V. A. (2001) Initial stages of the GaN growth on oxidized silicon. Technical Physics Letters, 27. 1010-1012 doi:10.1134/1.1432331
Bessolov, V. N., Evstropov, V. V., Fradkov, A. L., Fedirko, V. A., Kompan, M. E., Konenkova, E. V., Zhilyaev, Yu. V. (2003) Radiationless recombination mechanisms in GaN surface layers determined from photoluminescence. physica status solidi (a), 195 (1). 106-111 doi:10.1002/pssa.200306279
Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Mokeev, A. S., Raevskii, S. D. (1998) Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions. Technical Physics Letters, 24. 986-987 doi:10.1134/1.1262343
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Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2019) Epitaxy of GaN(0001) and GaN(10 $$\bar {1}$$ 1) Layers on Si(100) Substrate. Technical Physics Letters, 45. 529-532 doi:10.1134/s106378501906004x
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Zhilyaev, Yu. V., Raevskii, S. D., Grabko, D. Z., Leu, D. S., Kompan, M. E., Yusupova, Sh. A., Shcheglov, M. P. (2005) Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system. Technical Physics Letters, 31. 367-369 doi:10.1134/1.1931770
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Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2020) Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering. Technical Physics Letters, 46 (4) 382-384 doi:10.1134/s1063785020040185
 
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