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Zhilyaev, Yu. V., Nasonov, A. V., Raevskii, S. D., Rodin, S. N., Shcheglov, M. P., Yusupova, Sh. A., Davydov, V. Yu. (2003) Bulk large-area GaN layers. Technical Physics Letters, 29. 400-403 doi:10.1134/1.1579807

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Reference TypeJournal (article/letter/editorial)
TitleBulk large-area GaN layers
JournalTechnical Physics Letters
AuthorsZhilyaev, Yu. V.Author
Nasonov, A. V.Author
Raevskii, S. D.Author
Rodin, S. N.Author
Shcheglov, M. P.Author
Yusupova, Sh. A.Author
Davydov, V. Yu.Author
Year2003 (May)Volume29
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1579807Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6205037Long-form Identifiermindat:1:5:6205037:1
GUID0
Full ReferenceZhilyaev, Yu. V., Nasonov, A. V., Raevskii, S. D., Rodin, S. N., Shcheglov, M. P., Yusupova, Sh. A., Davydov, V. Yu. (2003) Bulk large-area GaN layers. Technical Physics Letters, 29. 400-403 doi:10.1134/1.1579807
Plain TextZhilyaev, Yu. V., Nasonov, A. V., Raevskii, S. D., Rodin, S. N., Shcheglov, M. P., Yusupova, Sh. A., Davydov, V. Yu. (2003) Bulk large-area GaN layers. Technical Physics Letters, 29. 400-403 doi:10.1134/1.1579807
In(n.d.) Technical Physics Letters Vol. 29. Pleiades Publishing Ltd

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Zhilyaev, Yu. V., Raevskii, S. D., Grabko, D. Z., Leu, D. S., Kompan, M. E., Yusupova, Sh. A., Shcheglov, M. P. (2005) Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system. Technical Physics Letters, 31. 367-369 doi:10.1134/1.1931770
Zhilyaev, Yu. V., Nasonov, A. V., Raevski, S. D., Rodin, S. N., Shcheglov, M. P., Davydov, V. Yu. (2003) Bulk gallium nitride: preparation and study of properties. physica status solidi (a), 195 (1). 122-126 doi:10.1002/pssa.200306284
Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskii, S. D., Fradkov, A. L., Fedirko, V. A. (2002) High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28. 994-996 doi:10.1134/1.1535513
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