Aksyanov, I. G., Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Osipov, A. V., Rodin, S. N., Feoktistov, N. A., Sharofidinov, Sh., Shcheglov, M. P. (2008) Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer. Technical Physics Letters, 34. 479-482 doi:10.1134/s1063785008060084

See Also

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	Bessolov, V. N., Botnaryuk, V. M., Zhilyaev, Yu. V., Konenkova, E. V., Poletaev, N. K., Raevskiĭ, S. D., Rodin, S. N., Smirnov, S. L., Sharofidinov, Sh., Shcheglov, M. P., Park, Hee Seok, Koike, Masayoshi (2006) Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers. Technical Physics Letters, 32. 674-676 doi:10.1134/s1063785006080116
	Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Poletaev, N. K., Sharofidinov, Sh., Shcheglov, M. P. (2012) Epitaxy of gallium nitride in semi-polar direction on silicon. Technical Physics Letters, 38. 9-11 doi:10.1134/s1063785012010051
	Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Sharofidinov, Sh., Shcheglov, M. P. (2013) Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Technical Physics Letters, 39. 274-276 doi:10.1134/s106378501303019x
	Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046
	Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2020) Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering. Technical Physics Letters, 46 (4) 382-384 doi:10.1134/s1063785020040185
	Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P. (2019) Epitaxy of GaN(0001) and GaN(10 $$\bar {1}$$ 1) Layers on Si(100) Substrate. Technical Physics Letters, 45. 529-532 doi:10.1134/s106378501906004x
	Kompan, M. E., Aksyanov, I. G., Kul’kova, I. V., Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A. (2009) Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy. Physics of the Solid State, 51. 2469-2473 doi:10.1134/s1063783409120075
	Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Mesh, M. V., Raevskii, S. D., Fradkov, A. L., Fedirko, V. A. (2002) High-temperature annealing of bulk GaN layers. Technical Physics Letters, 28. 994-996 doi:10.1134/1.1535513
	Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Kukushkin, S. A., Luk’yanov, A. V., Raevskii, S. D., Fedirko, V. A. (2001) Initial stages of the GaN growth on oxidized silicon. Technical Physics Letters, 27. 1010-1012 doi:10.1134/1.1432331
	Sorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158