Sorokin, L. M., Veselov, N. V., Shcheglov, M. P., Kalmykov, A. E., Sitnikova, A. A., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A. (2008) Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Technical Physics Letters, 34. 992-994 doi:10.1134/s1063785008110278

See Also

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	Sorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158
	Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046
	Sorokin, L M, Kalmykov, A E, Myasoedov, A V, Veselov, N V, Bessolov, V N, Feoktistov, N A, Osipov, A V, Kukushkin, S A (2011) Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM. Journal of Physics: Conference Series, 326. 12015pp. doi:10.1088/1742-6596/326/1/012015
	Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Sorokin, L. M., Feoktistov, N. A., Sharofidinov, Sh., Shcheglov, M. P., Kukushkin, S. A., Mets, L. I., Osipov, A. V. (2010) Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology. Technical Physics Letters, 36. 496-499 doi:10.1134/s1063785010060039
	Aksyanov, I. G., Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Osipov, A. V., Rodin, S. N., Feoktistov, N. A., Sharofidinov, Sh., Shcheglov, M. P. (2008) Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer. Technical Physics Letters, 34. 479-482 doi:10.1134/s1063785008060084
	Ratnikov, V. V., Kalmykov, A. E., Myasoedov, A. V., Kukushkin, S. A., Osipov, A. V., Sorokin, L. M. (2013) Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage. Technical Physics Letters, 39. 994-997 doi:10.1134/s1063785013110230
	Pronin, I. P., Kaptelov, E. Yu., Senkevich, S. V., Klimov, V. A., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A. (2008) Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties. Technical Physics Letters, 34. 838-840 doi:10.1134/s1063785008100088
	Sorokin, L M, Kalmykov, A E, Myasoedov, A V, Bessolov, V N, Osipov, A V, Kukushkin, S A (2013) Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure. Journal of Physics: Conference Series, 471. 12033pp. doi:10.1088/1742-6596/471/1/012033
	Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Sharofidinov, Sh., Shcheglov, M. P. (2013) Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Technical Physics Letters, 39. 274-276 doi:10.1134/s106378501303019x
	Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201
	Lebedev, A. A., Petrov, V. N., Titkov, A. N., Sorokin, L. M., Tregubova, A. S., Mosina, G. N., Cherenkov, A. E., Shcheglov, M. P. (2005) Heteropolytype structures with SiC quantum dots. Technical Physics Letters, 31. 997-1000 doi:10.1134/1.2150879