Pronin, I. P., Kaptelov, E. Yu., Senkevich, S. V., Klimov, V. A., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A. (2008) Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric properties. Technical Physics Letters, 34. 838-840 doi:10.1134/s1063785008100088

See Also

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	Kukushkin, S. A., Osipov, A. V., Sergeeva, O. N., Kiselev, D. A., Bogomolov, A. A., Solnyshkin, A. V., Kaptelov, E. Yu., Senkevich, S. V., Pronin, I. P. (2016) Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate. Physics of the Solid State, 58. 967-970 doi:10.1134/s1063783416050139
	Dolgintsev, D. M., Staritsyn, M. V., Pronin, V. P., Kaptelov, E. Yu., Senkevich, S. V., Pronin, I. P., Nemov, S. A. (2019) Peculiarities of the Structure and Properties of Thin PZT Films with Strongly Nonuniform Depth–Composition Profiles. Technical Physics Letters, 45. 839-842 doi:10.1134/s1063785019080200
	Tumarkin, A. V., Razumov, S. V., Gagarin, A. G., Altynnikov, A. G., Stozharov, V. M., Kaptelov, E. Yu., Senkevich, S. V., Pronin, I. P. (2016) The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering. Technical Physics Letters, 42. 143-145 doi:10.1134/s1063785016020140
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	Sergeeva, O. N., Bogomolov, A. A., Kiselev, D. A., Malinkovich, M. D., Pronin, I. P., Kaptelov, E. Yu., Senkevich, S. V., Pronin, V. P. (2014) Pyroelectric and piezoelectric properties of thin PZT films at the morphotropic phase boundary. Physics of the Solid State, 56. 715-719 doi:10.1134/s1063783414040295
	Valeeva, A. R., Kaptelov, E. Yu., Senkevich, S. V., Pronin, I. P., Nemov, S. A, Pronin, V. P. (2023) An Influence of Mechanical Stresses on the Magnitude of the Internal Field in Lead Zirconate Titanate Thin Films. Technical Physics Letters, 49. doi:10.1134/s1063785023010327
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	Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046