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Kuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455

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Reference TypeJournal (article/letter/editorial)
TitleCrystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy
JournalPhysics of the Solid State
AuthorsKuznetsov, V. P.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853455Search in ResearchGate
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Mindat Ref. ID6152006Long-form Identifiermindat:1:5:6152006:8
GUID0
Full ReferenceKuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455
Plain TextKuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

See Also

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Vdovin, V. I. (2005) Light-Emitting Si : Er Structures Prepared by Molecular-Beam Epitaxy: Structural Defects. Physics of the Solid State, 47. 1823pp. doi:10.1134/1.2087730
Krasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453
Remizov, D. Yu. (2005) Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 98pp. doi:10.1134/1.1853454
Shmagin, V. B., Remizov, D. Yu., Krasil’nik, Z. F., Kuznetsov, V. P., Shabanov, V. N., Krasil’nikova, L. V., Kryzhkov, D. I., Drozdov, M. N. (2004) Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy. Physics of the Solid State, 46. 109-112 doi:10.1134/1.1641934
Kesler, V. G., Logvinskii, L. M., Mashanov, V. I., Pchelyakov, O. P., Ul’yanov, V. V. (2002) Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy. Physics of the Solid State, 44. 709-713 doi:10.1134/1.1470563
Shmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
Vostokov, N. V. (2005) Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure. Physics of the Solid State, 47. 42pp. doi:10.1134/1.1853441
Soshnikov, I. P., Cirlin, G. É., Tonkikh, A. A., Nevedomskiĭ, V. N., Samsonenko, Yu. B., Ustinov, V. M. (2007) Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy. Physics of the Solid State, 49. 1440-1445 doi:10.1134/s1063783407080069
Kozyrev, S. P. (2008) Lattice IR spectroscopy of Zn1 −x Cd x Se epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy. Physics of the Solid State, 50. 1117-1121 doi:10.1134/s1063783408060206
Kuznetsov, V. P., Andreev, A. Yu, Kuznetsov, O. A., Nikolaeva, L. E., Zotova, T. M., Gudkova, N. V. (1991) Heavily doped Si layers grown by molecular beam epitaxy in vacuum. physica status solidi (a), 127 (2). 371-376 doi:10.1002/pssa.2211270211
Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459
 
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